Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(2021) In IEEE Electron Device Letters 42(11). p.1596-1598- Abstract
Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/μm, while devices with a 120-nm-long field plate show 1.5 mS/μm but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby... (More)
Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/μm, while devices with a 120-nm-long field plate show 1.5 mS/μm but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby reducing the parasitic bipolar effect in the MOSFET channel as well. The devices show promise in applications in circuits and systems requiring large power-handling.
(Less)
- author
- Kilpi, Olli Pekka LU ; Andric, Stefan LU ; Svensson, Johannes LU ; Ram, Mamidala Saketh LU ; Lind, Erik LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2021
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Breakdown, Electric breakdown, Field plate, Heterostructure, InAs, InGaAs, Logic gates, MOSFET, Nanoscale devices, Nanowire, Performance evaluation, Transconductance, Transistors, Vertical
- in
- IEEE Electron Device Letters
- volume
- 42
- issue
- 11
- pages
- 1596 - 1598
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85116898015
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2021.3115022
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: IEEE
- id
- 8fadba78-2834-4e51-b8df-9c92c7edded3
- date added to LUP
- 2021-11-16 17:36:37
- date last changed
- 2024-08-11 01:19:02
@article{8fadba78-2834-4e51-b8df-9c92c7edded3, abstract = {{<p>Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/&#x03BC;m, while devices with a 120-nm-long field plate show 1.5 mS/&#x03BC;m but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby reducing the parasitic bipolar effect in the MOSFET channel as well. The devices show promise in applications in circuits and systems requiring large power-handling.</p>}}, author = {{Kilpi, Olli Pekka and Andric, Stefan and Svensson, Johannes and Ram, Mamidala Saketh and Lind, Erik and Wernersson, Lars Erik}}, issn = {{0741-3106}}, keywords = {{Breakdown; Electric breakdown; Field plate; Heterostructure; InAs; InGaAs; Logic gates; MOSFET; Nanoscale devices; Nanowire; Performance evaluation; Transconductance; Transistors; Vertical}}, language = {{eng}}, number = {{11}}, pages = {{1596--1598}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate}}, url = {{http://dx.doi.org/10.1109/LED.2021.3115022}}, doi = {{10.1109/LED.2021.3115022}}, volume = {{42}}, year = {{2021}}, }