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Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate

Kilpi, Olli Pekka LU ; Andric, Stefan LU ; Svensson, Johannes LU ; Ram, Mamidala Saketh LU orcid ; Lind, Erik LU orcid and Wernersson, Lars Erik LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
Abstract

Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/μm, while devices with a 120-nm-long field plate show 1.5 mS/μm but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby... (More)

Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/μm, while devices with a 120-nm-long field plate show 1.5 mS/μm but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby reducing the parasitic bipolar effect in the MOSFET channel as well. The devices show promise in applications in circuits and systems requiring large power-handling.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Breakdown, Electric breakdown, Field plate, Heterostructure, InAs, InGaAs, Logic gates, MOSFET, Nanoscale devices, Nanowire, Performance evaluation, Transconductance, Transistors, Vertical
in
IEEE Electron Device Letters
volume
42
issue
11
pages
1596 - 1598
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85116898015
ISSN
0741-3106
DOI
10.1109/LED.2021.3115022
language
English
LU publication?
yes
additional info
Publisher Copyright: IEEE
id
8fadba78-2834-4e51-b8df-9c92c7edded3
date added to LUP
2021-11-16 17:36:37
date last changed
2025-10-14 08:54:15
@article{8fadba78-2834-4e51-b8df-9c92c7edded3,
  abstract     = {{<p>Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/&amp;#x03BC;m, while devices with a 120-nm-long field plate show 1.5 mS/&amp;#x03BC;m but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby reducing the parasitic bipolar effect in the MOSFET channel as well. The devices show promise in applications in circuits and systems requiring large power-handling.</p>}},
  author       = {{Kilpi, Olli Pekka and Andric, Stefan and Svensson, Johannes and Ram, Mamidala Saketh and Lind, Erik and Wernersson, Lars Erik}},
  issn         = {{0741-3106}},
  keywords     = {{Breakdown; Electric breakdown; Field plate; Heterostructure; InAs; InGaAs; Logic gates; MOSFET; Nanoscale devices; Nanowire; Performance evaluation; Transconductance; Transistors; Vertical}},
  language     = {{eng}},
  number       = {{11}},
  pages        = {{1596--1598}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate}},
  url          = {{http://dx.doi.org/10.1109/LED.2021.3115022}},
  doi          = {{10.1109/LED.2021.3115022}},
  volume       = {{42}},
  year         = {{2021}},
}