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- 2025
-
Mark
Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
Lofstrand, Anette LU ; Sandberg, Marcus E. LU
; Svensson, Johannes
LU
and Fhager, Lars
LU
(2025)
In IEEE Electron Device Letters
46(4).
p.560-563
- Contribution to journal › Article
- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka LU ; Andric, Stefan LU ; Svensson, Johannes LU ; Ram, Mamidala Saketh LU
; Lind, Erik
LU
and Wernersson, Lars Erik
LU
(2021)
In IEEE Electron Device Letters
42(11).
p.1596-1598
- Contribution to journal › Article
-
Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Andric, Stefan LU ; Ohlsson Fhager, Lars LU
and Wernersson, Lars Erik
LU
(2021)
In IEEE Transactions on Nanotechnology
20.
p.434-440
- Contribution to journal › Article
- 2019
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.1089-1091
- Contribution to journal › Article