Anette Löfstrand (Former)
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- 2025
-
Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
-
Mark
Impact of Layout on the RF Performance of Vertical In–Ga–As Nanowire MOSFETs
- Contribution to journal › Article
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Mark
Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
- Contribution to journal › Article
- 2022
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
- Contribution to journal › Article
-
Mark
Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer
- Contribution to journal › Article
- 2021
-
Mark
Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer
(2021) Advances in Patterning Materials and Processes XXXVIII 2020 In Proceedings of SPIE - The International Society for Optical Engineering 11612.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Poly(styrene)- block-Maltoheptaose Films for Sub-10 nm Pattern Transfer : Implications for Transistor Fabrication
- Contribution to journal › Article
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Mark
Block Copolymer Nanolithography for Sub-50 nm Structure Applications
(2021)
- Thesis › Doctoral thesis (compilation)
- 2020
-
Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
- Contribution to journal › Article
- 2019
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Mark
Design and development of nanoimprint-enabled structures for molecular motor devices
- Contribution to journal › Article
