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Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer

Löfstrand, Anette LU ; Jafari Jam, Reza LU ; Mumtaz, Muhammad ; Mothander, Karolina LU ; Nylander, Tommy LU ; Vorobiev, Alexei ; Rahaman, Ahibur LU ; Chen, Wen Chang ; Borsali, Redouane and Maximov, Ivan LU (2021) Advances in Patterning Materials and Processes XXXVIII 2020 In Proceedings of SPIE - The International Society for Optical Engineering 11612.
Abstract

This study presents how sequential infiltration synthesis of trimethyl aluminium and water into a carbohydrate-based block copolymer was used to enable pattern transfer of 6 nm half-pitch horizontal cylinders into silicon. Specular neutron reflectometry measurements of poly(styrene)-block-maltoheptaose self-assembled into horizontal cylinders indicate an increasing content of alumina after each sequential infiltration cycle, comparing 0, 1, 2, and 4 cycles, with alumina content reaching 2.4 vol% after four infiltrations cycles. Dry etching processes in inductively coupled plasma reactive ion etching for sub-10 nm patterns were developed, using a two-step technique: O2-plasma for polymer removal and a reactive ion etching of Si using a... (More)

This study presents how sequential infiltration synthesis of trimethyl aluminium and water into a carbohydrate-based block copolymer was used to enable pattern transfer of 6 nm half-pitch horizontal cylinders into silicon. Specular neutron reflectometry measurements of poly(styrene)-block-maltoheptaose self-assembled into horizontal cylinders indicate an increasing content of alumina after each sequential infiltration cycle, comparing 0, 1, 2, and 4 cycles, with alumina content reaching 2.4 vol% after four infiltrations cycles. Dry etching processes in inductively coupled plasma reactive ion etching for sub-10 nm patterns were developed, using a two-step technique: O2-plasma for polymer removal and a reactive ion etching of Si using a mixture of SF6 and C4F8 gases. Etch selectivity of more than 2:1 of silicon over alumina-like etch mask material was achieved. To evaluate the etching process, the etched Si structures were measured and characterized by scanning electron microscopy. These results are expected to be of use for nanofabrication and applications in the sub-10 nm regime.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Block copolymer, Carbohydrate, Pattern transfer, Sequential infiltration synthesis, Specular neutron reflectometry
host publication
Advances in Patterning Materials and Processes XXXVIII
series title
Proceedings of SPIE - The International Society for Optical Engineering
editor
Sanders, Daniel P. and Guerrero, Douglas
volume
11612
article number
116120W
publisher
SPIE
conference name
Advances in Patterning Materials and Processes XXXVIII 2020
conference location
Virtual, Online, United States
conference dates
2021-02-22 - 2021-02-26
external identifiers
  • scopus:85103335676
ISSN
0277-786X
1996-756X
ISBN
9781510640573
DOI
10.1117/12.2583803
language
English
LU publication?
yes
id
7d04fcd1-ddcd-4f60-8bdc-09518744e2c6
date added to LUP
2021-04-08 12:47:47
date last changed
2021-04-13 05:09:53
@inproceedings{7d04fcd1-ddcd-4f60-8bdc-09518744e2c6,
  abstract     = {<p>This study presents how sequential infiltration synthesis of trimethyl aluminium and water into a carbohydrate-based block copolymer was used to enable pattern transfer of 6 nm half-pitch horizontal cylinders into silicon. Specular neutron reflectometry measurements of poly(styrene)-block-maltoheptaose self-assembled into horizontal cylinders indicate an increasing content of alumina after each sequential infiltration cycle, comparing 0, 1, 2, and 4 cycles, with alumina content reaching 2.4 vol% after four infiltrations cycles. Dry etching processes in inductively coupled plasma reactive ion etching for sub-10 nm patterns were developed, using a two-step technique: O2-plasma for polymer removal and a reactive ion etching of Si using a mixture of SF6 and C4F8 gases. Etch selectivity of more than 2:1 of silicon over alumina-like etch mask material was achieved. To evaluate the etching process, the etched Si structures were measured and characterized by scanning electron microscopy. These results are expected to be of use for nanofabrication and applications in the sub-10 nm regime.</p>},
  author       = {Löfstrand, Anette and Jafari Jam, Reza and Mumtaz, Muhammad and Mothander, Karolina and Nylander, Tommy and Vorobiev, Alexei and Rahaman, Ahibur and Chen, Wen Chang and Borsali, Redouane and Maximov, Ivan},
  booktitle    = {Advances in Patterning Materials and Processes XXXVIII},
  editor       = {Sanders, Daniel P. and Guerrero, Douglas},
  isbn         = {9781510640573},
  issn         = {0277-786X},
  language     = {eng},
  publisher    = {SPIE},
  series       = {Proceedings of SPIE - The International Society for Optical Engineering},
  title        = {Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer},
  url          = {http://dx.doi.org/10.1117/12.2583803},
  doi          = {10.1117/12.2583803},
  volume       = {11612},
  year         = {2021},
}