Block Copolymer Nanolithography for Sub-50 nm Structure Applications
(2021)- Abstract
- As high technology device patterns are continuing to move towards decreasing critical dimensions and increasing pattern density, there is a need for lithography to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single digit nanometer resolution, has a pattern periodicity of about 7-200 nm, and easily scales up to large area at a low cost. The use of BCPs with high immiscibility of constituent blocks, so-called high-Chi material, enables smaller pattern dimensions and is therefore of special interest. However, for lithography techniques to be applicable, also integration into existing nanofabrication processes is necessary. Furthermore, development of techniques to perform sub 10 nm pattern... (More)
- As high technology device patterns are continuing to move towards decreasing critical dimensions and increasing pattern density, there is a need for lithography to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single digit nanometer resolution, has a pattern periodicity of about 7-200 nm, and easily scales up to large area at a low cost. The use of BCPs with high immiscibility of constituent blocks, so-called high-Chi material, enables smaller pattern dimensions and is therefore of special interest. However, for lithography techniques to be applicable, also integration into existing nanofabrication processes is necessary. Furthermore, development of techniques to perform sub 10 nm pattern transfer is an enabler for continued device development. This dissertation first provides an overview of the BCP lithography field, to thereafter study the selective infiltration synthesis of alumina into the maltoheptaose block in high-Chi poly(styrene)-block-maltoheptaose of 12 nm pattern periodicity. The infiltration was studied using neutron reflectometry, and a subsequent sub-10 nm pattern transfer was performed into silicon. Also, it studies the process of surface reconstruction of high-Chi poly(styrene)-block-poly(4-vinylpyridine) of 50 nm pattern periodicity, more specifically the effect of time and temperature on pore diameter. Furthermore, pattern transfer of the surface reconstructed BCP film into silicon nitride, and selective area metal-organic vapor phase epitaxy (SA-MOVPE) of indium arsenide vertical nanowires on a silicon platform, using directed self-assembly is demonstrated. By directing the self-assembly along different crystal directions of the substrate, two vertical nanowire configurations were grown. Demonstration of gate all-around stack deposition of oxide/metal to the densely packed nanowire configurations was thereafter made. The results have contributed to the knowledge on BCP lithography and pattern transfer in the sub 50 nm regime, enabling new approaches for applications such as vertical nanowire, or fin transistors. (Less)
- Abstract (Swedish)
- När de kritiska mönsterdimensionerna för högteknologiska enheter fortsätter krympa och mönstertätheten fortsätter öka, behöver även litografin att gå i samma riktning. En lovande teknologi är sampolymerlitografi, som har en upplösning under 10 nm, en mönsterperiodicitet omkring 7-200 nm, och lätt kan skalas upp till större ytor till en låg kostnad. Användandet av sampolymerer där de ingående blocken är oblandbara, material med så kallat högt chi, möjliggör mindre mönsterdimensioner och är därför speciellt intressanta. För att litografiteknologier ska vara applicerbara är det dock också nödvändigt att integrera dem i existerande nanofabrikationsprocesser. Dessutom möjliggör utvecklingen av tekniker att utföra mönsteröverföring av storlekar... (More)
- När de kritiska mönsterdimensionerna för högteknologiska enheter fortsätter krympa och mönstertätheten fortsätter öka, behöver även litografin att gå i samma riktning. En lovande teknologi är sampolymerlitografi, som har en upplösning under 10 nm, en mönsterperiodicitet omkring 7-200 nm, och lätt kan skalas upp till större ytor till en låg kostnad. Användandet av sampolymerer där de ingående blocken är oblandbara, material med så kallat högt chi, möjliggör mindre mönsterdimensioner och är därför speciellt intressanta. För att litografiteknologier ska vara applicerbara är det dock också nödvändigt att integrera dem i existerande nanofabrikationsprocesser. Dessutom möjliggör utvecklingen av tekniker att utföra mönsteröverföring av storlekar under 10 nm också vidareutvecklingen av högteknologiska enheter. Denna avhandling ger först en överblick över sampolymerlitografiområdet, för att därefter studera sekventiell infiltrationssyntes av aluminiumoxid i poly(styren)-block-maltoheptaos, med högt chi och 12 nm periodicitet. Infiltrationen studeras med hjälp av neutronreflektometri och efterföljande mönsteröverföring i kisel, med mindre än 10 nm mönsterstorlek. Avhandlingen studerar även ytrekonstruktion av poly(styren)-block-poly(4-vinylpyridin), med högt chi och 50 nm periodicitet, särskilt hur tid och temperatur påverkar pordiametern. Därutöver demonstreras mönsteröverföring i kiselnitrid av den ytrekonstruerade sampolymeren, med riktad självorganisation, samt metallorganisk ångfasepitaxi från utvalda områden, för att erhålla vertikala nanotrådar av indiumarsenid på en kiselplattform. Genom att rikta självorganisationen längs olika kristallriktningar hos substratet, kan två olika typer av nanotrådskonfigurationer erhållas. Därefter demonstreras deponering av oxid- och metallstack för grind runtom (eng. gate all-around) för de tätpackade nanotrådskonfigurationerna. Resultaten har bidragit till kunskapen om sampolymerlitografi och mönsteröverföring för storlekar under 50 nm, vilket möjliggör nya angreppssätt för applikationer såsom transistorer av vertikala nanotrådar eller fenor. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/d747e751-de4b-48e3-8ab8-db1fc01f2ce3
- author
- Löfstrand, Anette LU
- supervisor
- opponent
-
- Ass. Prof. Segal-Peretz, Tamar, Technion - Israel Institute of Technology, Israel.
- organization
- alternative title
- Sampolymernanolitografi för applikationer med strukturer under 50 nm
- publishing date
- 2021-11-02
- type
- Thesis
- publication status
- published
- subject
- keywords
- Sampolymer, riktad självorganisation, ytrekonstruktion, mönsteröverföring, sekventiell infiltrationssyntes, neutronreflektometri, Block copolymer, Directed self-assembly, Surface reconstruction, Pattern transfer, Sequential infiltration synthesis, Neutron reflectometry, Fysicumarkivet A:2021:Löfstrand
- pages
- 93 pages
- publisher
- Department of Physics, Lund University
- defense location
- Lecture hall Rydbergsalen, Department of Physics, Sölvegatan 14, Faculty of Engineering LTH, Lund University, Lund. Zoom: https://lu-se.zoom.us/j/68019866087?pwd=cEJ6MVpNdXZVYUpOQWUwdi9obG16dz09 Passcode: 443762
- defense date
- 2021-11-26 09:15:00
- ISBN
- 978-91-8039-044-6
- 978-91-8039-043-9
- language
- English
- LU publication?
- yes
- id
- d747e751-de4b-48e3-8ab8-db1fc01f2ce3
- date added to LUP
- 2021-10-31 21:32:27
- date last changed
- 2022-08-18 10:40:21
@phdthesis{d747e751-de4b-48e3-8ab8-db1fc01f2ce3,
abstract = {{As high technology device patterns are continuing to move towards decreasing critical dimensions and increasing pattern density, there is a need for lithography to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single digit nanometer resolution, has a pattern periodicity of about 7-200 nm, and easily scales up to large area at a low cost. The use of BCPs with high immiscibility of constituent blocks, so-called high-Chi material, enables smaller pattern dimensions and is therefore of special interest. However, for lithography techniques to be applicable, also integration into existing nanofabrication processes is necessary. Furthermore, development of techniques to perform sub 10 nm pattern transfer is an enabler for continued device development. This dissertation first provides an overview of the BCP lithography field, to thereafter study the selective infiltration synthesis of alumina into the maltoheptaose block in high-Chi poly(styrene)-block-maltoheptaose of 12 nm pattern periodicity. The infiltration was studied using neutron reflectometry, and a subsequent sub-10 nm pattern transfer was performed into silicon. Also, it studies the process of surface reconstruction of high-Chi poly(styrene)-block-poly(4-vinylpyridine) of 50 nm pattern periodicity, more specifically the effect of time and temperature on pore diameter. Furthermore, pattern transfer of the surface reconstructed BCP film into silicon nitride, and selective area metal-organic vapor phase epitaxy (SA-MOVPE) of indium arsenide vertical nanowires on a silicon platform, using directed self-assembly is demonstrated. By directing the self-assembly along different crystal directions of the substrate, two vertical nanowire configurations were grown. Demonstration of gate all-around stack deposition of oxide/metal to the densely packed nanowire configurations was thereafter made. The results have contributed to the knowledge on BCP lithography and pattern transfer in the sub 50 nm regime, enabling new approaches for applications such as vertical nanowire, or fin transistors.}},
author = {{Löfstrand, Anette}},
isbn = {{978-91-8039-044-6}},
keywords = {{Sampolymer; riktad självorganisation; ytrekonstruktion; mönsteröverföring; sekventiell infiltrationssyntes; neutronreflektometri; Block copolymer; Directed self-assembly; Surface reconstruction; Pattern transfer; Sequential infiltration synthesis; Neutron reflectometry; Fysicumarkivet A:2021:Löfstrand}},
language = {{eng}},
month = {{11}},
publisher = {{Department of Physics, Lund University}},
school = {{Lund University}},
title = {{Block Copolymer Nanolithography for Sub-50 nm Structure Applications}},
url = {{https://lup.lub.lu.se/search/files/109046944/e_spik_ex_anette.pdf}},
year = {{2021}},
}