TFET Circuit Configurations Operating below 60 mV/dec
(2024) In IEEE Transactions on Nanotechnology p.1-8- Abstract
Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit... (More)
Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.
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- author
- Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU ; Fhager, Lars Ohlsson LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2024
- type
- Contribution to journal
- publication status
- epub
- subject
- keywords
- Current mirrors, III-V, IoT circuit configuration, Logic gates, low power, MOSFET, Nanowires, Quantum capacitance, sub-threshold analog, TFETs, Transistors, vertical nanowires
- in
- IEEE Transactions on Nanotechnology
- pages
- 8 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85194882417
- ISSN
- 1536-125X
- DOI
- 10.1109/TNANO.2024.3407360
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: IEEE
- id
- 3632e21e-0252-473e-8d44-19217514c596
- date added to LUP
- 2024-06-11 14:57:14
- date last changed
- 2024-06-11 17:04:03
@article{3632e21e-0252-473e-8d44-19217514c596, abstract = {{<p>Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.</p>}}, author = {{Rangasamy, Gautham and Zhu, Zhongyunshen and Fhager, Lars Ohlsson and Wernersson, Lars Erik}}, issn = {{1536-125X}}, keywords = {{Current mirrors; III-V; IoT circuit configuration; Logic gates; low power; MOSFET; Nanowires; Quantum capacitance; sub-threshold analog; TFETs; Transistors; vertical nanowires}}, language = {{eng}}, pages = {{1--8}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Nanotechnology}}, title = {{TFET Circuit Configurations Operating below 60 mV/dec}}, url = {{http://dx.doi.org/10.1109/TNANO.2024.3407360}}, doi = {{10.1109/TNANO.2024.3407360}}, year = {{2024}}, }