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Cryogenic performance of vertical III-V nanowire gate-all-around ferroelectric FETs

Mamidala, Karthik Ram LU orcid ; Zhu, Zhongyunshen LU orcid and Wernersson, Lars-Erik LU (2025) 7th International Conference on Emerging Electronics
Abstract
This work investigates the cryogenic performance of InAs-based vertical nanowire ferroelectric field-effect transistors (VNW-FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric. Measurements at 300 K and 14 K reveal a 25% increase in memory window, from 560 mV at room temperature to 700 mV at 14 K, indicating enhanced polarization stability at low temperatures while also observing an improvement in the subthreshold swing. These results highlight the potential of VNW-FeFETs as scalable non-volatile memory elements for cryogenic computing applications.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2025 IEEE 7th International Conference on Emerging Electronics (ICEE), Bengaluru, India, 2025
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
7th International Conference on Emerging Electronics
conference dates
2025-12-13 - 2025-12-16
ISBN
979-8-3315-5547-4
979-8-3315-5548-1
DOI
10.1109/ICEE67165.2025.11409760
language
English
LU publication?
yes
id
263597a5-0e6c-4cc8-aea5-cd1db5ef1df2
date added to LUP
2026-03-10 17:14:29
date last changed
2026-04-01 06:55:59
@inproceedings{263597a5-0e6c-4cc8-aea5-cd1db5ef1df2,
  abstract     = {{This work investigates the cryogenic performance of InAs-based vertical nanowire ferroelectric field-effect transistors (VNW-FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric. Measurements at 300 K and 14 K reveal a 25% increase in memory window, from 560 mV at room temperature to 700 mV at 14 K, indicating enhanced polarization stability at low temperatures while also observing an improvement in the subthreshold swing. These results highlight the potential of VNW-FeFETs as scalable non-volatile memory elements for cryogenic computing applications.}},
  author       = {{Mamidala, Karthik Ram and Zhu, Zhongyunshen and Wernersson, Lars-Erik}},
  booktitle    = {{2025 IEEE 7th International Conference on Emerging Electronics (ICEE), Bengaluru, India, 2025}},
  isbn         = {{979-8-3315-5547-4}},
  language     = {{eng}},
  month        = {{12}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Cryogenic performance of vertical III-V nanowire gate-all-around ferroelectric FETs}},
  url          = {{http://dx.doi.org/10.1109/ICEE67165.2025.11409760}},
  doi          = {{10.1109/ICEE67165.2025.11409760}},
  year         = {{2025}},
}