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III-V heterostructure tunnel field-effect transistor operation at different temperature regimes

Krishnaraja, Abinaya LU ; Zhu, Zhongyunshen LU orcid ; Svensson, Johannes LU and Wernersson, Lars Erik LU (2024) In Applied Physics Letters 125(19).
Abstract

Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes. TFET characteristics from 13 to 300 K both in forward and reverse bias are discussed by employing a variation in InAs/InGaAsSb/GaSb heterojunction vertical nanowire devices. Evaluation of the TFET Negative Differential Resistance (NDR) characteristics at different temperatures is established as a technique to probe the dopant incorporation. It is observed that the temperature dependence of the Fermi degeneracy and Fermi-Dirac distribution largely influences the transistor performance at... (More)

Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes. TFET characteristics from 13 to 300 K both in forward and reverse bias are discussed by employing a variation in InAs/InGaAsSb/GaSb heterojunction vertical nanowire devices. Evaluation of the TFET Negative Differential Resistance (NDR) characteristics at different temperatures is established as a technique to probe the dopant incorporation. It is observed that the temperature dependence of the Fermi degeneracy and Fermi-Dirac distribution largely influences the transistor performance at each operating temperature. Our investigation reveals that the TFETs demonstrate lower subthreshold swing than the physical limit of MOSFETs above 125 K. For low-temperature applications, the devices can be operated down to a low operating bias of 0.1 V, while for high temperature, a larger bias of 0.3 V is preferred.

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Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
125
issue
19
article number
193501
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85208478111
ISSN
0003-6951
DOI
10.1063/5.0218490
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2024 Author(s).
id
e189e4ee-c57b-4083-afbc-a71543f92632
date added to LUP
2025-01-14 12:57:40
date last changed
2025-06-23 12:42:54
@article{e189e4ee-c57b-4083-afbc-a71543f92632,
  abstract     = {{<p>Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes. TFET characteristics from 13 to 300 K both in forward and reverse bias are discussed by employing a variation in InAs/InGaAsSb/GaSb heterojunction vertical nanowire devices. Evaluation of the TFET Negative Differential Resistance (NDR) characteristics at different temperatures is established as a technique to probe the dopant incorporation. It is observed that the temperature dependence of the Fermi degeneracy and Fermi-Dirac distribution largely influences the transistor performance at each operating temperature. Our investigation reveals that the TFETs demonstrate lower subthreshold swing than the physical limit of MOSFETs above 125 K. For low-temperature applications, the devices can be operated down to a low operating bias of 0.1 V, while for high temperature, a larger bias of 0.3 V is preferred.</p>}},
  author       = {{Krishnaraja, Abinaya and Zhu, Zhongyunshen and Svensson, Johannes and Wernersson, Lars Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{19}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{III-V heterostructure tunnel field-effect transistor operation at different temperature regimes}},
  url          = {{http://dx.doi.org/10.1063/5.0218490}},
  doi          = {{10.1063/5.0218490}},
  volume       = {{125}},
  year         = {{2024}},
}