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Multi-level vertical III-V nanowire gate-all-rround ferroelectric FETs for in-memory computing

Mamidala, Karthik Ram LU ; Zhu, Zhongyunshen LU orcid and Wernersson, Lars-Erik LU (2025)
Abstract
Hafnia-based ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory and neuromorphic computing due to their fast switching, low power consumption, and CMOS compatibility [1]–[3]. IIIV materials, such as InAs, offer superior electron transport properties [4], [5], and high remnant polarization at low annealing temperatures when integrated with hafnia-based ferroelectrics [6], [7]. This work uses retention measurements to explore the multi-level characterization of an InAs vertical nanowire gate-all-around FeFET (VNW GAA FeFET). The VNW GAA architecture is promising for increased scalability [8], [9], while the multi-level switching behavior of FeFETs enhances their utility in in-memory computing and... (More)
Hafnia-based ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory and neuromorphic computing due to their fast switching, low power consumption, and CMOS compatibility [1]–[3]. IIIV materials, such as InAs, offer superior electron transport properties [4], [5], and high remnant polarization at low annealing temperatures when integrated with hafnia-based ferroelectrics [6], [7]. This work uses retention measurements to explore the multi-level characterization of an InAs vertical nanowire gate-all-around FeFET (VNW GAA FeFET). The VNW GAA architecture is promising for increased scalability [8], [9], while the multi-level switching behavior of FeFETs enhances their utility in in-memory computing and neuromorphic applications [10]. This study advances III-V FeFET technology by demonstrating 100 s long multi-level switching, which is important for next-generation memory and AI hardware. (Less)
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author
; and
organization
publishing date
type
Contribution to conference
publication status
published
subject
pages
2 pages
DOI
10.1109/DRC66027.2025.11105745
language
English
LU publication?
yes
id
c9ec4cf0-9144-49d2-831e-22ac963eeac8
date added to LUP
2025-08-13 21:20:44
date last changed
2025-09-24 14:33:21
@misc{c9ec4cf0-9144-49d2-831e-22ac963eeac8,
  abstract     = {{Hafnia-based ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory and neuromorphic computing due to their fast switching, low power consumption, and CMOS compatibility [1]–[3]. IIIV materials, such as InAs, offer superior electron transport properties [4], [5], and high remnant polarization at low annealing temperatures when integrated with hafnia-based ferroelectrics [6], [7]. This work uses retention measurements to explore the multi-level characterization of an InAs vertical nanowire gate-all-around FeFET (VNW GAA FeFET). The VNW GAA architecture is promising for increased scalability [8], [9], while the multi-level switching behavior of FeFETs enhances their utility in in-memory computing and neuromorphic applications [10]. This study advances III-V FeFET technology by demonstrating 100 s long multi-level switching, which is important for next-generation memory and AI hardware.}},
  author       = {{Mamidala, Karthik Ram and Zhu, Zhongyunshen and Wernersson, Lars-Erik}},
  language     = {{eng}},
  month        = {{08}},
  title        = {{Multi-level vertical III-V nanowire gate-all-rround ferroelectric FETs for in-memory computing}},
  url          = {{http://dx.doi.org/10.1109/DRC66027.2025.11105745}},
  doi          = {{10.1109/DRC66027.2025.11105745}},
  year         = {{2025}},
}