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Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec

Krishnaraja, Abinaya LU ; Zhu, Zhongyunshen LU orcid ; Svensson, Johannes LU and Wernersson, Lars Erik LU (2023) In IEEE Electron Device Letters 44(7). p.1064-1067
Abstract

III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} < $ 1 nA/ $\mu \text{m}$. The... (More)

III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} < $ 1 nA/ $\mu \text{m}$. The substantial improvement in the device performance compared to earlier reports provides an opportunity for III-V complementary field-effect transistor integration.

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Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
core-shell FET, III-V PMOS, low-power, Nanowire FET
in
IEEE Electron Device Letters
volume
44
issue
7
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85160217272
ISSN
0741-3106
DOI
10.1109/LED.2023.3277917
language
English
LU publication?
yes
additional info
Publisher Copyright: © 1980-2012 IEEE.
id
11162d88-ba67-4495-9540-03fb2cdc0396
date added to LUP
2023-08-11 21:44:46
date last changed
2025-10-14 11:24:29
@article{11162d88-ba67-4495-9540-03fb2cdc0396,
  abstract     = {{<p>III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} &lt; $ 1 nA/ $\mu \text{m}$. The substantial improvement in the device performance compared to earlier reports provides an opportunity for III-V complementary field-effect transistor integration.</p>}},
  author       = {{Krishnaraja, Abinaya and Zhu, Zhongyunshen and Svensson, Johannes and Wernersson, Lars Erik}},
  issn         = {{0741-3106}},
  keywords     = {{core-shell FET; III-V PMOS; low-power; Nanowire FET}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{7}},
  pages        = {{1064--1067}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec}},
  url          = {{http://dx.doi.org/10.1109/LED.2023.3277917}},
  doi          = {{10.1109/LED.2023.3277917}},
  volume       = {{44}},
  year         = {{2023}},
}