Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(2023) In IEEE Electron Device Letters 44(7). p.1064-1067- Abstract
III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} < $ 1 nA/ $\mu \text{m}$. The... (More)
III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} < $ 1 nA/ $\mu \text{m}$. The substantial improvement in the device performance compared to earlier reports provides an opportunity for III-V complementary field-effect transistor integration.
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- author
- Krishnaraja, Abinaya LU ; Zhu, Zhongyunshen LU ; Svensson, Johannes LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2023-07-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- core-shell FET, III-V PMOS, low-power, Nanowire FET
- in
- IEEE Electron Device Letters
- volume
- 44
- issue
- 7
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85160217272
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2023.3277917
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 1980-2012 IEEE.
- id
- 11162d88-ba67-4495-9540-03fb2cdc0396
- date added to LUP
- 2023-08-11 21:44:46
- date last changed
- 2023-11-22 20:59:47
@article{11162d88-ba67-4495-9540-03fb2cdc0396, abstract = {{<p>III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm results in a good balance between the on-state and the off-state performances. The presented devices demonstrate the lowest inverse subthreshold slope ( ${S}$ ) for a III-V PMOS with ${S}_{\text {sat}}$ = 75 mV/dec with significant ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{4}}$ and ${I}_{\text {min}} < $ 1 nA/ $\mu \text{m}$. The substantial improvement in the device performance compared to earlier reports provides an opportunity for III-V complementary field-effect transistor integration.</p>}}, author = {{Krishnaraja, Abinaya and Zhu, Zhongyunshen and Svensson, Johannes and Wernersson, Lars Erik}}, issn = {{0741-3106}}, keywords = {{core-shell FET; III-V PMOS; low-power; Nanowire FET}}, language = {{eng}}, month = {{07}}, number = {{7}}, pages = {{1064--1067}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec}}, url = {{http://dx.doi.org/10.1109/LED.2023.3277917}}, doi = {{10.1109/LED.2023.3277917}}, volume = {{44}}, year = {{2023}}, }