Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(2024) In IEEE Electron Device Letters p.1-1- Abstract
Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.
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https://lup.lub.lu.se/record/787a150e-e58d-41a3-aee2-90731adf6187
- author
- Ram, Mamidala Karthik LU ; Dahlberg, Hannes LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2024
- type
- Contribution to journal
- publication status
- epub
- subject
- keywords
- Capacitors, Cryogenic, Cryogenics, FeRAM, Ferroelectric, Non-volatile, Nucleation Limited Switching, Performance evaluation, Random access memory, Semiconductor device measurement, Switches, Switching Dynamics, Voltage measurement
- in
- IEEE Electron Device Letters
- pages
- 1 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85201784247
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2024.3448378
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: IEEE
- id
- 787a150e-e58d-41a3-aee2-90731adf6187
- date added to LUP
- 2024-09-04 17:25:03
- date last changed
- 2024-09-05 09:17:24
@article{787a150e-e58d-41a3-aee2-90731adf6187, abstract = {{<p>Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.</p>}}, author = {{Ram, Mamidala Karthik and Dahlberg, Hannes and Wernersson, Lars Erik}}, issn = {{0741-3106}}, keywords = {{Capacitors; Cryogenic; Cryogenics; FeRAM; Ferroelectric; Non-volatile; Nucleation Limited Switching; Performance evaluation; Random access memory; Semiconductor device measurement; Switches; Switching Dynamics; Voltage measurement}}, language = {{eng}}, pages = {{1--1}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor}}, url = {{http://dx.doi.org/10.1109/LED.2024.3448378}}, doi = {{10.1109/LED.2024.3448378}}, year = {{2024}}, }