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Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

Hellenbrand, Markus LU ; Kilpi, Olli-Pekka LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2019) Insulating Films on Semiconductors (INFOS)
Abstract
We compare III-V nanowire (NW) metal-oxidesemiconductor field-effect transistors (MOSFETs) in a vertical gate-all-around (GAA) as well as a lateral trigate architecture with planar reference MOSFETs and reveal that the NW geometry does not deteriorate the low-frequency noise (LFN) performance. In fact, with gate oxides deposited at the same conditions, the NW structures show potential to achieve better metrics due to slightly lower border trap densities Nbt. The normalized LFN in transistors with a higher number of NW can degrade due to averaging effects between individual nanowires within the same device.
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author
organization
publishing date
type
Contribution to conference
publication status
published
subject
keywords
Low-Frequency Noise, MOSFETs, Nanowires (NWs)
conference name
Insulating Films on Semiconductors (INFOS)
conference location
Cambridge, United Kingdom
conference dates
2019-06-30 - 2019-07-03
language
English
LU publication?
yes
id
816937a5-14db-4df9-8db9-78c88019578a
date added to LUP
2019-07-22 10:36:45
date last changed
2019-07-22 14:29:04
@misc{816937a5-14db-4df9-8db9-78c88019578a,
  abstract     = {We compare III-V nanowire (NW) metal-oxidesemiconductor field-effect transistors (MOSFETs) in a vertical gate-all-around (GAA) as well as a lateral trigate architecture with planar reference MOSFETs and reveal that the NW geometry does not deteriorate the low-frequency noise (LFN) performance. In fact, with gate oxides deposited at the same conditions, the NW structures show potential to achieve better metrics due to slightly lower border trap densities Nbt. The normalized LFN in transistors with a higher number of NW can degrade due to averaging effects between individual nanowires within the same device.},
  author       = {Hellenbrand, Markus and Kilpi, Olli-Pekka and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik},
  keyword      = {Low-Frequency Noise,MOSFETs,Nanowires (NWs)},
  language     = {eng},
  location     = {Cambridge, United Kingdom},
  month        = {07},
  title        = {Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs},
  year         = {2019},
}