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Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

Kilpi, Olli Pekka LU ; Svensson, Johannes LU ; Wu, Jun LU ; Persson, Axel R. LU ; Wallenberg, Reine LU ; Lind, Erik LU and Wernersson, Lars Erik LU (2017) In Nano Letters 17(10). p.6006-6010
Abstract

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V... (More)

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
heterostructure, InAs, InGaAs, MOSFETs, nanowire, vapor-liquid-solid
in
Nano Letters
volume
17
issue
10
pages
5 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85031124804
  • wos:000413057500019
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b02251
language
English
LU publication?
yes
id
47aa0120-d45a-4cad-bdca-d69eff653827
date added to LUP
2017-10-26 13:54:58
date last changed
2018-01-16 13:24:23
@article{47aa0120-d45a-4cad-bdca-d69eff653827,
  abstract     = {<p>III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.</p>},
  author       = {Kilpi, Olli Pekka and Svensson, Johannes and Wu, Jun and Persson, Axel R. and Wallenberg, Reine and Lind, Erik and Wernersson, Lars Erik},
  issn         = {1530-6984},
  keyword      = {heterostructure,InAs,InGaAs,MOSFETs,nanowire,vapor-liquid-solid},
  language     = {eng},
  month        = {10},
  number       = {10},
  pages        = {6006--6010},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b02251},
  volume       = {17},
  year         = {2017},
}