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Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

Kilpi, Olli Pekka LU ; Svensson, Johannes LU ; Wu, Jun LU ; Persson, Axel R. LU orcid ; Wallenberg, Reine LU ; Lind, Erik LU orcid and Wernersson, Lars Erik LU (2017) In Nano Letters 17(10). p.6006-6010
Abstract

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V... (More)

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
heterostructure, InAs, InGaAs, MOSFETs, nanowire, vapor-liquid-solid
in
Nano Letters
volume
17
issue
10
pages
5 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85031124804
  • pmid:28873310
  • wos:000413057500019
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b02251
language
English
LU publication?
yes
id
47aa0120-d45a-4cad-bdca-d69eff653827
date added to LUP
2017-10-26 13:54:58
date last changed
2025-01-07 23:29:11
@article{47aa0120-d45a-4cad-bdca-d69eff653827,
  abstract     = {{<p>III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.</p>}},
  author       = {{Kilpi, Olli Pekka and Svensson, Johannes and Wu, Jun and Persson, Axel R. and Wallenberg, Reine and Lind, Erik and Wernersson, Lars Erik}},
  issn         = {{1530-6984}},
  keywords     = {{heterostructure; InAs; InGaAs; MOSFETs; nanowire; vapor-liquid-solid}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{10}},
  pages        = {{6006--6010}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si}},
  url          = {{https://lup.lub.lu.se/search/files/67113478/nanolett17.pdf}},
  doi          = {{10.1021/acs.nanolett.7b02251}},
  volume       = {{17}},
  year         = {{2017}},
}