Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(2023) In Semiconductor Science and Technology 38(5).- Abstract
Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and... (More)
Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.
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- author
- Olausson, Patrik LU ; Yadav, Rohit LU ; Timm, Rainer LU and Lind, Erik LU
- organization
- publishing date
- 2023-05
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- atomic hydrogen annealing, effective mobility, InGaAs, MOSFETs, reliability, subthreshold swing
- in
- Semiconductor Science and Technology
- volume
- 38
- issue
- 5
- article number
- 055001
- pages
- 8 pages
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85150452828
- scopus:85150452828
- ISSN
- 0268-1242
- DOI
- 10.1088/1361-6641/acc08c
- project
- III-V Devices for Emerging Electronic Applications
- language
- English
- LU publication?
- yes
- id
- f177a4c0-d0f6-4c50-a857-dc8f82395eac
- date added to LUP
- 2023-03-28 11:32:00
- date last changed
- 2024-08-09 05:35:25
@article{f177a4c0-d0f6-4c50-a857-dc8f82395eac, abstract = {{<p>Recent work showing a strong quality improvement of the Si/SiO<sub>2</sub> material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.</p>}}, author = {{Olausson, Patrik and Yadav, Rohit and Timm, Rainer and Lind, Erik}}, issn = {{0268-1242}}, keywords = {{atomic hydrogen annealing; effective mobility; InGaAs; MOSFETs; reliability; subthreshold swing}}, language = {{eng}}, number = {{5}}, publisher = {{IOP Publishing}}, series = {{Semiconductor Science and Technology}}, title = {{Low temperature atomic hydrogen annealing of InGaAs MOSFETs}}, url = {{http://dx.doi.org/10.1088/1361-6641/acc08c}}, doi = {{10.1088/1361-6641/acc08c}}, volume = {{38}}, year = {{2023}}, }