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Low temperature atomic hydrogen annealing of InGaAs MOSFETs

Olausson, Patrik LU ; Yadav, Rohit LU orcid ; Timm, Rainer LU orcid and Lind, Erik LU (2023) In Semiconductor Science and Technology 38(5).
Abstract

Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and... (More)

Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
atomic hydrogen annealing, effective mobility, InGaAs, MOSFETs, reliability, subthreshold swing
in
Semiconductor Science and Technology
volume
38
issue
5
article number
055001
pages
8 pages
publisher
IOP Publishing
external identifiers
  • scopus:85150452828
  • scopus:85150452828
ISSN
0268-1242
DOI
10.1088/1361-6641/acc08c
project
III-V Devices for Emerging Electronic Applications
language
English
LU publication?
yes
id
f177a4c0-d0f6-4c50-a857-dc8f82395eac
date added to LUP
2023-03-28 11:32:00
date last changed
2024-01-18 19:44:28
@article{f177a4c0-d0f6-4c50-a857-dc8f82395eac,
  abstract     = {{<p>Recent work showing a strong quality improvement of the Si/SiO<sub>2</sub> material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.</p>}},
  author       = {{Olausson, Patrik and Yadav, Rohit and Timm, Rainer and Lind, Erik}},
  issn         = {{0268-1242}},
  keywords     = {{atomic hydrogen annealing; effective mobility; InGaAs; MOSFETs; reliability; subthreshold swing}},
  language     = {{eng}},
  number       = {{5}},
  publisher    = {{IOP Publishing}},
  series       = {{Semiconductor Science and Technology}},
  title        = {{Low temperature atomic hydrogen annealing of InGaAs MOSFETs}},
  url          = {{http://dx.doi.org/10.1088/1361-6641/acc08c}},
  doi          = {{10.1088/1361-6641/acc08c}},
  volume       = {{38}},
  year         = {{2023}},
}