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Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K

Mamidala, Saketh Ram LU orcid ; Mamidala, Karthik Ram LU and Wernersson, Lars-Erik LU (2024) In IEEE Transactions on Electron Devices
Abstract
The nonvolatile cryogenic memories can play an important role in realizing energy-efficient and scalable low-temperature electronics for quantum computing and future high-performance computing systems. In this article, we evaluate
he cryogenic performance of HfOx-based resistive random access memory (RRAM) and demonstrate that the addition of extremely thin ∼0.5-nm AlOx barrier layers enables a high endurance of >107 cycles, which represents a 20×
improvement compared to operation at room temperature (RT). We also show that by leveraging the analog behavior of the RESET at cryogenic temperatures in contrast to the abrupt RESET at RT, multiple resistance levels beneficial for multibit memory and weight tuning in deep neural... (More)
The nonvolatile cryogenic memories can play an important role in realizing energy-efficient and scalable low-temperature electronics for quantum computing and future high-performance computing systems. In this article, we evaluate
he cryogenic performance of HfOx-based resistive random access memory (RRAM) and demonstrate that the addition of extremely thin ∼0.5-nm AlOx barrier layers enables a high endurance of >107 cycles, which represents a 20×
improvement compared to operation at room temperature (RT). We also show that by leveraging the analog behavior of the RESET at cryogenic temperatures in contrast to the abrupt RESET at RT, multiple resistance levels beneficial for multibit memory and weight tuning in deep neural networks (DNNs) can be realized. The multibit capability coupled with high endurance and low operational voltages at 14 K presents promising opportunities for incorporating RRAMs into memory and machine learning applications within cryogenic computing environments.
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publication status
published
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in
IEEE Transactions on Electron Devices
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85216282088
ISSN
0018-9383
DOI
10.1109/TED.2024.3520948
language
English
LU publication?
yes
id
80a624ef-53f5-4604-9ba2-8d8103435cb4
date added to LUP
2025-01-06 09:24:07
date last changed
2025-06-01 08:58:45
@article{80a624ef-53f5-4604-9ba2-8d8103435cb4,
  abstract     = {{The nonvolatile cryogenic memories can play an important role in realizing energy-efficient and scalable low-temperature electronics for quantum computing and future high-performance computing systems. In this article, we evaluate <br/> he cryogenic performance of HfOx-based resistive random access memory (RRAM) and demonstrate that the addition of extremely thin ∼0.5-nm AlOx barrier layers enables a high endurance of &gt;107 cycles, which represents a 20× <br/> improvement compared to operation at room temperature (RT). We also show that by leveraging the analog behavior of the RESET at cryogenic temperatures in contrast to the abrupt RESET at RT, multiple resistance levels beneficial for multibit memory and weight tuning in deep neural networks (DNNs) can be realized. The multibit capability coupled with high endurance and low operational voltages at 14 K presents promising opportunities for incorporating RRAMs into memory and machine learning applications within cryogenic computing environments.<br/>}},
  author       = {{Mamidala, Saketh Ram and Mamidala, Karthik Ram and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  language     = {{eng}},
  month        = {{12}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K}},
  url          = {{http://dx.doi.org/10.1109/TED.2024.3520948}},
  doi          = {{10.1109/TED.2024.3520948}},
  year         = {{2024}},
}