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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs

Gribisch, Philipp LU orcid ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya LU and Lind, Erik LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
Abstract

In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate... (More)

In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate voltages, which is a slight improvement to reported values for similar devices.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
FinFET, fully-vertical, GaN, normally-coff
in
IEEE Transactions on Electron Devices
volume
70
issue
8
pages
7 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85164438710
ISSN
0018-9383
DOI
10.1109/TED.2023.3287820
language
English
LU publication?
yes
id
a42d4e30-3899-4351-99e9-938be3aa9c93
date added to LUP
2023-10-16 15:12:02
date last changed
2023-10-16 15:12:02
@article{a42d4e30-3899-4351-99e9-938be3aa9c93,
  abstract     = {{<p>In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate voltages, which is a slight improvement to reported values for similar devices.</p>}},
  author       = {{Gribisch, Philipp and Carrascon, Rosalia Delgado and Darakchieva, Vanya and Lind, Erik}},
  issn         = {{0018-9383}},
  keywords     = {{FinFET; fully-vertical; GaN; normally-coff}},
  language     = {{eng}},
  number       = {{8}},
  pages        = {{4101--4107}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs}},
  url          = {{http://dx.doi.org/10.1109/TED.2023.3287820}},
  doi          = {{10.1109/TED.2023.3287820}},
  volume       = {{70}},
  year         = {{2023}},
}