Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107- Abstract
In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate... (More)
In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate voltages, which is a slight improvement to reported values for similar devices.
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- author
- Gribisch, Philipp LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya LU and Lind, Erik LU
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- FinFET, fully-vertical, GaN, normally-coff
- in
- IEEE Transactions on Electron Devices
- volume
- 70
- issue
- 8
- pages
- 7 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85164438710
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2023.3287820
- language
- English
- LU publication?
- yes
- id
- a42d4e30-3899-4351-99e9-938be3aa9c93
- date added to LUP
- 2023-10-16 15:12:02
- date last changed
- 2023-10-16 15:12:02
@article{a42d4e30-3899-4351-99e9-938be3aa9c93, abstract = {{<p>In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1∼μ m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm2/(Vs) at higher gate voltages, which is a slight improvement to reported values for similar devices.</p>}}, author = {{Gribisch, Philipp and Carrascon, Rosalia Delgado and Darakchieva, Vanya and Lind, Erik}}, issn = {{0018-9383}}, keywords = {{FinFET; fully-vertical; GaN; normally-coff}}, language = {{eng}}, number = {{8}}, pages = {{4101--4107}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs}}, url = {{http://dx.doi.org/10.1109/TED.2023.3287820}}, doi = {{10.1109/TED.2023.3287820}}, volume = {{70}}, year = {{2023}}, }