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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates

Gribisch, Philipp LU orcid ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya LU and Lind, Erik LU (2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414
Abstract

In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly... (More)

In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.

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Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Fin field effect transistor (FinFET), gallium nitride (GaN), quasi-vertical, silicon carbide (SiC)
in
IEEE Transactions on Electron Devices
volume
70
issue
5
pages
7 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85153349741
ISSN
0018-9383
DOI
10.1109/TED.2023.3263154
language
English
LU publication?
yes
id
07b76331-f659-45cb-8e65-af7cfc784e82
date added to LUP
2023-07-14 12:48:10
date last changed
2023-11-22 20:05:06
@article{07b76331-f659-45cb-8e65-af7cfc784e82,
  abstract     = {{<p>In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.</p>}},
  author       = {{Gribisch, Philipp and Carrascon, Rosalia Delgado and Darakchieva, Vanya and Lind, Erik}},
  issn         = {{0018-9383}},
  keywords     = {{Fin field effect transistor (FinFET); gallium nitride (GaN); quasi-vertical; silicon carbide (SiC)}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{2408--2414}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates}},
  url          = {{http://dx.doi.org/10.1109/TED.2023.3263154}},
  doi          = {{10.1109/TED.2023.3263154}},
  volume       = {{70}},
  year         = {{2023}},
}