Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414- Abstract
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly... (More)
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.
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- author
- Gribisch, Philipp LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya LU and Lind, Erik LU
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Fin field effect transistor (FinFET), gallium nitride (GaN), quasi-vertical, silicon carbide (SiC)
- in
- IEEE Transactions on Electron Devices
- volume
- 70
- issue
- 5
- pages
- 7 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85153349741
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2023.3263154
- language
- English
- LU publication?
- yes
- id
- 07b76331-f659-45cb-8e65-af7cfc784e82
- date added to LUP
- 2023-07-14 12:48:10
- date last changed
- 2023-11-22 20:05:06
@article{07b76331-f659-45cb-8e65-af7cfc784e82, abstract = {{<p>In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below 0.05 $\text{m}\Omega \cdot $ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.</p>}}, author = {{Gribisch, Philipp and Carrascon, Rosalia Delgado and Darakchieva, Vanya and Lind, Erik}}, issn = {{0018-9383}}, keywords = {{Fin field effect transistor (FinFET); gallium nitride (GaN); quasi-vertical; silicon carbide (SiC)}}, language = {{eng}}, number = {{5}}, pages = {{2408--2414}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates}}, url = {{http://dx.doi.org/10.1109/TED.2023.3263154}}, doi = {{10.1109/TED.2023.3263154}}, volume = {{70}}, year = {{2023}}, }