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2024
Mark Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis ; Zhang, Hengfang ; Knight, Sean ^LU ; Persson, Axel ; Stanishev, Vallery ; Chen, Jr Tai ; Paskov, Plamen and Schubert, Mathias ^LU , et al. (2024) In Materials 17(13).
- Contribution to journal › Article
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article

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