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Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Kakanakova-Georgieva, Anelia ; Papamichail, Alexis ; Stanishev, Vallery and Darakchieva, Vanya LU (2022) In Physica Status Solidi (B) Basic Research 259(10).
Abstract

Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 1019 cm−3 is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p ≈2 × 1017 cm−3 in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can... (More)

Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 1019 cm−3 is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p ≈2 × 1017 cm−3 in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated MgGa acceptor.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
gallium nitride, hydrogen, metal–organic chemical vapor deposition, p-type doping
in
Physica Status Solidi (B) Basic Research
volume
259
issue
10
article number
2200137
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85131858691
ISSN
0370-1972
DOI
10.1002/pssb.202200137
language
English
LU publication?
yes
id
03a10bc7-3e65-4290-af82-2917bbd812d0
date added to LUP
2022-09-07 14:10:39
date last changed
2023-11-21 11:07:10
@article{03a10bc7-3e65-4290-af82-2917bbd812d0,
  abstract     = {{<p>Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 10<sup>19</sup> cm<sup>−3</sup> is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p ≈2 × 10<sup>17</sup> cm<sup>−3</sup> in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated Mg<sub>Ga</sub> acceptor.</p>}},
  author       = {{Kakanakova-Georgieva, Anelia and Papamichail, Alexis and Stanishev, Vallery and Darakchieva, Vanya}},
  issn         = {{0370-1972}},
  keywords     = {{gallium nitride; hydrogen; metal–organic chemical vapor deposition; p-type doping}},
  language     = {{eng}},
  number       = {{10}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi (B) Basic Research}},
  title        = {{Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD}},
  url          = {{http://dx.doi.org/10.1002/pssb.202200137}},
  doi          = {{10.1002/pssb.202200137}},
  volume       = {{259}},
  year         = {{2022}},
}