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- 2025
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Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
- 2017
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
(2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
