Nano Electronics
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- 2024
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(
- Contribution to journal › Article
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
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Mark
Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
2023)(
- Thesis › Doctoral thesis (compilation)
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Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
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Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
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Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
-
Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
-
Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
-
Mark
Radio Frequency InGaAs MOSFETs
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowires For In-Memory Computing
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
(
- Contribution to journal › Article
-
Mark
8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
-
Mark
Cryogenic Characteristics of InGaAs MOSFET
(
- Contribution to journal › Article
-
Mark
Accelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
2023) 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 p.488-496(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
The ESSnuSB Design Study: Overview and Future Prospects
(
- Contribution to journal › Article
-
Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Electronics
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
(
- Contribution to journal › Article
-
Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
- 2022
-
Mark
Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(
- Contribution to journal › Article
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
-
Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
-
Mark
Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
-
Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
-
Mark
A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
(
- Contribution to journal › Article
-
Mark
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
(
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article