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Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing

Södergren, Lasse LU ; Olausson, Patrik LU and Lind, Erik LU (2022) In Nano Letters 22(10). p.3884-3888
Abstract

In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing. We have characterized the device at cryogenic temperatures, and at 40 mK the device exhibits a minimum inverse subthreshold slope of 2 mV/dec, which is encouraging for low power operation. At low drain bias, the transmission breaks up into several resonance peaks due to a rough conduction band edge; this is qualitatively explained by... (More)

In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing. We have characterized the device at cryogenic temperatures, and at 40 mK the device exhibits a minimum inverse subthreshold slope of 2 mV/dec, which is encouraging for low power operation. At low drain bias, the transmission breaks up into several resonance peaks due to a rough conduction band edge; this is qualitatively explained by a simple model based on a 1D real space tight-binding nonequilibrium Green's functions model.

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Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
cryogenic, InGaAs, multiplexer, nanowire
in
Nano Letters
volume
22
issue
10
pages
5 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:35549486
  • scopus:85131017359
ISSN
1530-6984
DOI
10.1021/acs.nanolett.1c04971
project
III-V Devices for Emerging Electronic Applications
language
English
LU publication?
yes
id
3fe34822-c8df-4592-81d0-d72b93dbc292
date added to LUP
2022-09-05 08:47:41
date last changed
2024-04-18 13:33:05
@article{3fe34822-c8df-4592-81d0-d72b93dbc292,
  abstract     = {{<p>In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing. We have characterized the device at cryogenic temperatures, and at 40 mK the device exhibits a minimum inverse subthreshold slope of 2 mV/dec, which is encouraging for low power operation. At low drain bias, the transmission breaks up into several resonance peaks due to a rough conduction band edge; this is qualitatively explained by a simple model based on a 1D real space tight-binding nonequilibrium Green's functions model.</p>}},
  author       = {{Södergren, Lasse and Olausson, Patrik and Lind, Erik}},
  issn         = {{1530-6984}},
  keywords     = {{cryogenic; InGaAs; multiplexer; nanowire}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{10}},
  pages        = {{3884--3888}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.1c04971}},
  doi          = {{10.1021/acs.nanolett.1c04971}},
  volume       = {{22}},
  year         = {{2022}},
}