Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(2023) In APL Materials 11(8).- Abstract
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics... (More)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.
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- author
- organization
- publishing date
- 2023-08-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- APL Materials
- volume
- 11
- issue
- 8
- article number
- 089201
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85170280278
- ISSN
- 2166-532X
- DOI
- 10.1063/5.0148068
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2023 Author(s).
- id
- 858103de-cb72-44eb-bab0-eceb9a600d1a
- date added to LUP
- 2023-09-16 11:04:31
- date last changed
- 2023-12-06 07:11:11
@article{858103de-cb72-44eb-bab0-eceb9a600d1a, abstract = {{<p>Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO<sub>2</sub>-ZrO<sub>2</sub> materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.</p>}}, author = {{Silva, José P.B. and Alcala, Ruben and Avci, Uygar E. and Barrett, Nick and Bégon-Lours, Laura and Borg, Mattias and Byun, Seungyong and Chang, Sou Chi and Cheong, Sang Wook and Choe, Duk Hyun and Coignus, Jean and Deshpande, Veeresh and Dimoulas, Athanasios and Dubourdieu, Catherine and Fina, Ignasi and Funakubo, Hiroshi and Grenouillet, Laurent and Gruverman, Alexei and Heo, Jinseong and Hoffmann, Michael and Hsain, H. Alex and Huang, Fei Ting and Hwang, Cheol Seong and Íñiguez, Jorge and Jones, Jacob L. and Karpov, Ilya V. and Kersch, Alfred and Kwon, Taegyu and Lancaster, Suzanne and Lederer, Maximilian and Lee, Younghwan and Lomenzo, Patrick D. and Martin, Lane W. and Martin, Simon and Migita, Shinji and Mikolajick, Thomas and Noheda, Beatriz and Park, Min Hyuk and Rabe, Karin M. and Salahuddin, Sayeef and Sánchez, Florencio and Seidel, Konrad and Shimizu, Takao and Shiraishi, Takahisa and Slesazeck, Stefan and Toriumi, Akira and Uchida, Hiroshi and Vilquin, Bertrand and Xu, Xianghan and Ye, Kun Hee and Schroeder, Uwe}}, issn = {{2166-532X}}, language = {{eng}}, month = {{08}}, number = {{8}}, publisher = {{American Institute of Physics (AIP)}}, series = {{APL Materials}}, title = {{Roadmap on ferroelectric hafnia- and zirconia-based materials and devices}}, url = {{http://dx.doi.org/10.1063/5.0148068}}, doi = {{10.1063/5.0148068}}, volume = {{11}}, year = {{2023}}, }