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Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si

Zhu, Zhongyunshen LU orcid ; Jönsson, Adam LU ; Liu, Yen Po LU ; Svensson, Johannes LU ; Timm, Rainer LU orcid and Wernersson, Lars Erik LU (2022) In ACS Applied Electronic Materials 4(1). p.531-538
Abstract

Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for... (More)

Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for GaSb nanowires compared to alcohol-based HCl:IPA, thereby realizing III-V on Si with the same etchant selection. Both DE chemicals show good interface quality of GaSb with a substantial reduction in Sb oxides for both etchants while the HCl:IPA resulted in a stronger reduction in the Ga oxides, as determined by X-ray photoelectron spectroscopy and in agreement with the electrical characterization. By implementing these DE schemes into vertical GaSb nanowire MOSFETs, a subthreshold swing of 107 mV/dec is obtained in the HCl:IPA pretreated sample, which is state of the art compared to reported Sb-based MOSFETs, suggesting a potential of Sb-based p-type devices for all-III-V CMOS technologies.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
BOE 30:1, digital etch, GaSb, HCl:IPA, III-V, MOSFET, nanowire
in
ACS Applied Electronic Materials
volume
4
issue
1
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:35098137
  • scopus:85123910287
ISSN
2637-6113
DOI
10.1021/acsaelm.1c01134
language
English
LU publication?
yes
id
39feb6ac-c20b-482f-b52a-be9abd17d440
date added to LUP
2022-04-06 12:35:22
date last changed
2024-05-08 20:19:24
@article{39feb6ac-c20b-482f-b52a-be9abd17d440,
  abstract     = {{<p>Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for GaSb nanowires compared to alcohol-based HCl:IPA, thereby realizing III-V on Si with the same etchant selection. Both DE chemicals show good interface quality of GaSb with a substantial reduction in Sb oxides for both etchants while the HCl:IPA resulted in a stronger reduction in the Ga oxides, as determined by X-ray photoelectron spectroscopy and in agreement with the electrical characterization. By implementing these DE schemes into vertical GaSb nanowire MOSFETs, a subthreshold swing of 107 mV/dec is obtained in the HCl:IPA pretreated sample, which is state of the art compared to reported Sb-based MOSFETs, suggesting a potential of Sb-based p-type devices for all-III-V CMOS technologies. </p>}},
  author       = {{Zhu, Zhongyunshen and Jönsson, Adam and Liu, Yen Po and Svensson, Johannes and Timm, Rainer and Wernersson, Lars Erik}},
  issn         = {{2637-6113}},
  keywords     = {{BOE 30:1; digital etch; GaSb; HCl:IPA; III-V; MOSFET; nanowire}},
  language     = {{eng}},
  month        = {{01}},
  number       = {{1}},
  pages        = {{531--538}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Electronic Materials}},
  title        = {{Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si}},
  url          = {{http://dx.doi.org/10.1021/acsaelm.1c01134}},
  doi          = {{10.1021/acsaelm.1c01134}},
  volume       = {{4}},
  year         = {{2022}},
}