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- 2024
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
2024) In Physica Status Solidi. A: Applications and Materials Science(
- Contribution to journal › Article
- 2023
-
Mark
8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Radio Frequency InGaAs MOSFETs
2023)(
- Thesis › Doctoral thesis (compilation)
- 2022
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Mark
Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(
- Contribution to journal › Article
- 2021
-
Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
(
- Contribution to journal › Article
- 2020
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article