Nano Electronics
1 – 10 of 43
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2019
- An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K
- Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
- Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
- Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
- Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- 2018
- Clutter analysis in a time-domain millimeter-wave reflectometry setup
- Fabrication of Tunnel Field-Effect Transistors
- Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- CMOS Integration Based on All-III-V Materials
- Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors