Nano Electronics
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- 2025
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Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
2025) In Physica Status Solidi (A) Applications and Materials Science(
- Contribution to journal › Article
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Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
2025) In Physica Status Solidi (A) Applications and Materials Science(
- Contribution to journal › Article
- 2024
-
Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
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- Contribution to journal › Article
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Mark
Gate-controlled near-surface Josephson junctions
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- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
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Mark
Characteristic Modes and Nonreciprocity
2024) 2024 IEEE International Symposium on Antennas and Propagation and INC/USNCURSI Radio Science Meeting, AP-S/INC-USNC-URSI 2024 In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) p.269-270(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
RF Characterization of Ferroelectric MOS Capacitors
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- Contribution to journal › Article
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
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- Contribution to journal › Article