Nano Electronics
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- 2019
- Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- 2018
- Clutter analysis in a time-domain millimeter-wave reflectometry setup
- Fabrication of Tunnel Field-Effect Transistors
- Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
- Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
- Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
- Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
- Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
- RF Characterisation of Vertical III-V Nanowire Tunnel FETs