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- 2024
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(
- Contribution to journal › Article
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
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Mark
Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
-
Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
-
Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
-
Mark
Radio Frequency InGaAs MOSFETs
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowires For In-Memory Computing
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
(
- Contribution to journal › Article
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Mark
8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
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Mark
Cryogenic Characteristics of InGaAs MOSFET
(
- Contribution to journal › Article
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Mark
Accelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
2023) 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 p.488-496(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
The ESSnuSB Design Study: Overview and Future Prospects
(
- Contribution to journal › Article
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Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Electronics
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
(
- Contribution to journal › Article
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Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
- 2022
-
Mark
Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(
- Contribution to journal › Article
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
-
Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
-
Mark
Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
-
Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
-
Mark
A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
(
- Contribution to journal › Article
-
Mark
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
(
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
-
Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
(
- Contribution to journal › Article
-
Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
(
- Contribution to journal › Article
-
Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Oxygen relocation during HfO2 ALD on InAs
(
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
(
- Contribution to journal › Article
- 2021
-
Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
(
- Contribution to journal › Article
-
Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
(
- Contribution to journal › Article
-
Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
-
Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
-
Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
(
- Contribution to journal › Article
-
Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
(
- Contribution to journal › Article
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Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
(
- Contribution to journal › Article
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
(
- Contribution to journal › Article
- 2020
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
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Mark
A phase-correlated duo-binary waveform generation technique for millimeter-wave radar pulses
(
- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
-
Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
-
Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
(
- Contribution to journal › Article
-
Mark
III-V Nanowires for High-Speed Electronics
(
- Thesis › Doctoral thesis (compilation)
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
-
Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
(
- Contribution to journal › Article
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Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
(
- Contribution to journal › Article
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Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
-
Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
(
- Contribution to journal › Article
-
Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
-
Mark
III-V Nanowire MOSFETs : RF-Properties and Applications
2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2019
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Trap-aware compact modeling and power-performance assessment of III-V tunnel FET
2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon
2019) 92nd ARFTG Microwave Measurement Conference, ARFTG 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Millimeter-Wave Pulse Radar Scattering Measurements on the Human Hand
(
- Contribution to journal › Article
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Millimeter-Wave Radar for Low-Power Applications
2019)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-complexity III-V circuitry for millimeter wave communication and radar
2019) 2019 IEEE Globecom Workshops, GC Wkshps 2019 In 2019 IEEE Globecom Workshops, GC Wkshps 2019 - Proceedings(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification
(
- Contribution to journal › Letter
- 2018
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
-
Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
2018) In Composants nanoélectroniques(
- Contribution to journal › Article
-
Mark
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract
-
Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
2018) Compound Semiconductor Week 2018(
- Contribution to conference › Abstract
-
Mark
Clutter analysis in a time-domain millimeter-wave reflectometry setup
2018) 12th European Conference on Antennas and Propagation, EuCAP 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
-
Mark
Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas
(
- Contribution to journal › Article
-
Mark
Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
-
Mark
Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
(
- Contribution to journal › Article
- 2017
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A transmission line model for co-designed slot-coupled dielectric resonator antennas
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2015
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding
-
Mark
III-V Heterostructure Nanowire Tunnel FETs
(
- Contribution to journal › Article