Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
(2017) p.38-41- Abstract
- Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4a3ec9e7-f15c-4094-8cef-b967b142fdf0
- author
- Hellenbrand, Markus
LU
; Memisevic, Elvedin
LU
; Svensson, Johannes
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2017-09
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Tunnel Field-Effect Transistors, Nanowires, Below 60 mV/decade, Random Telegraph Signal Noise, Elastic Tunneling
- host publication
- 47th European Solid-State Device Research Conference (ESSDERC), 2017
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85033442100
- ISBN
- 978-1-5090-5978-2
- 978-1-5090-5979-9
- DOI
- 10.1109/ESSDERC.2017.8066586
- language
- English
- LU publication?
- yes
- id
- 4a3ec9e7-f15c-4094-8cef-b967b142fdf0
- date added to LUP
- 2017-10-17 10:22:01
- date last changed
- 2025-01-07 22:57:52
@inproceedings{4a3ec9e7-f15c-4094-8cef-b967b142fdf0, abstract = {{Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.}}, author = {{Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{47th European Solid-State Device Research Conference (ESSDERC), 2017}}, isbn = {{978-1-5090-5978-2}}, keywords = {{Tunnel Field-Effect Transistors; Nanowires; Below 60 mV/decade; Random Telegraph Signal Noise; Elastic Tunneling}}, language = {{eng}}, pages = {{38--41}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade}}, url = {{https://lup.lub.lu.se/search/files/48383377/RTS_in_TFETs_MHE_LU_upload.pdf}}, doi = {{10.1109/ESSDERC.2017.8066586}}, year = {{2017}}, }