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Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2017) ESSDERC 47th European Solid-State Device Research Conference In 47th European Solid-State Device Research Conference (ESSDERC), 2017 p.38-41
Abstract
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Tunnel Field-Effect Transistors, Nanowires, Below 60 mV/decade, Random Telegraph Signal Noise, Elastic Tunneling
in
47th European Solid-State Device Research Conference (ESSDERC), 2017
pages
38 - 41
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
ESSDERC 47th European Solid-State Device Research Conference
external identifiers
  • scopus:85033442100
ISBN
978-1-5090-5979-9
978-1-5090-5978-2
DOI
10.1109/ESSDERC.2017.8066586
language
English
LU publication?
yes
id
4a3ec9e7-f15c-4094-8cef-b967b142fdf0
date added to LUP
2017-10-17 10:22:01
date last changed
2018-03-19 07:15:58
@inproceedings{4a3ec9e7-f15c-4094-8cef-b967b142fdf0,
  abstract     = {Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.},
  author       = {Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik},
  booktitle    = {47th European Solid-State Device Research Conference (ESSDERC), 2017},
  isbn         = {978-1-5090-5979-9},
  keyword      = {Tunnel Field-Effect Transistors,Nanowires,Below 60 mV/decade,Random Telegraph Signal Noise,Elastic Tunneling},
  language     = {eng},
  pages        = {38--41},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade},
  url          = {http://dx.doi.org/10.1109/ESSDERC.2017.8066586},
  year         = {2017},
}