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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

Jönsson, Adam LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2020) In IEEE Transactions on Electron Devices 67(10). p.4118-4122
Abstract
The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.
Abstract (Swedish)
The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Transactions on Electron Devices
volume
67
issue
10
pages
4118 - 4122
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85092197517
ISSN
0018-9383
DOI
10.1109/TED.2020.3012126
language
English
LU publication?
yes
id
288f9e76-0208-4283-b693-45ae908240bd
date added to LUP
2020-08-24 11:40:46
date last changed
2023-11-20 10:21:43
@article{288f9e76-0208-4283-b693-45ae908240bd,
  abstract     = {{The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.}},
  author       = {{Jönsson, Adam and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  language     = {{eng}},
  month        = {{08}},
  number       = {{10}},
  pages        = {{4118--4122}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si}},
  url          = {{https://lup.lub.lu.se/search/files/83002771/TED_GaSb_OPEN_ACCESS.pdf}},
  doi          = {{10.1109/TED.2020.3012126}},
  volume       = {{67}},
  year         = {{2020}},
}