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Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Berg, Martin; Kilpi, Olli-Pekka LU ; Svensson, Johannes LU and Wernersson, Lars-Erik LU (2017) In IEEE Electron Device Letters
Abstract
We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Vertical Nanowires, III-V, MOSFET, TFET, Low-Frequency Noise
in
IEEE Electron Device Letters
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85030790332
  • wos:000413794800003
ISSN
0741-3106
DOI
10.1109/LED.2017.2757538
language
English
LU publication?
yes
id
0fe03dc4-b87e-4b69-ac08-3e209465040c
date added to LUP
2017-10-02 14:47:09
date last changed
2018-04-11 12:30:13
@article{0fe03dc4-b87e-4b69-ac08-3e209465040c,
  abstract     = {We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.},
  author       = {Hellenbrand, Markus and Memisevic, Elvedin and Berg, Martin and Kilpi, Olli-Pekka and Svensson, Johannes and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {Vertical Nanowires,III-V,MOSFET,TFET,Low-Frequency Noise},
  language     = {eng},
  month        = {09},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs},
  url          = {http://dx.doi.org/10.1109/LED.2017.2757538},
  year         = {2017},
}