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- 2024
-
Mark
TFET Circuit Configurations Operating below 60 mV/dec
Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU
; Fhager, Lars Ohlsson
LU
and Wernersson, Lars Erik
LU
(2024)
In IEEE Transactions on Nanotechnology
23.
p.441-447
- Contribution to journal › Article
- 2023
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
Rangasamy, Gautham LU ; Ram, Mamidala Saketh LU
; Fhager, Lars Ohlsson
LU
and Wernersson, Lars Erik
LU
(2023)
In IEEE Electron Device Letters
44(7).
p.1212-1215
- Contribution to journal › Article
- 2018
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.943-946
- Contribution to journal › Letter
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.1089-1091
- Contribution to journal › Article
- 2017
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter