Capacitance Measurements in Vertical III-V Nanowire TFETs
(2018) In IEEE Electron Device Letters 39(7). p.943-946- Abstract
- By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/685b0f9c-09e1-4fba-8ffa-241997e52eaa
- author
- Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2018-05-04
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Vertical Nanowires, III-V, TFET, Small-signal model, Intrinsic Capacitance, RF, Cgd, Cgs
- in
- IEEE Electron Device Letters
- volume
- 39
- issue
- 7
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85046454344
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2018.2833168
- language
- English
- LU publication?
- yes
- id
- 685b0f9c-09e1-4fba-8ffa-241997e52eaa
- date added to LUP
- 2018-05-09 10:28:38
- date last changed
- 2024-06-24 14:15:54
@article{685b0f9c-09e1-4fba-8ffa-241997e52eaa, abstract = {{By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.}}, author = {{Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Krishnaraja, Abinaya and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{Vertical Nanowires; III-V; TFET; Small-signal model; Intrinsic Capacitance; RF; Cgd; Cgs}}, language = {{eng}}, month = {{05}}, number = {{7}}, pages = {{943--946}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Capacitance Measurements in Vertical III-V Nanowire TFETs}}, url = {{https://lup.lub.lu.se/search/files/48383230/Capacitances_TFETs_MHE_LU_upload.pdf}}, doi = {{10.1109/LED.2018.2833168}}, volume = {{39}}, year = {{2018}}, }