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Capacitance Measurements in Vertical III-V Nanowire TFETs

Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
Abstract
By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Vertical Nanowires, III-V, TFET, Small-signal model, Intrinsic Capacitance, RF, Cgd, Cgs
in
IEEE Electron Device Letters
volume
39
issue
7
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85046454344
ISSN
0741-3106
DOI
10.1109/LED.2018.2833168
language
English
LU publication?
yes
id
685b0f9c-09e1-4fba-8ffa-241997e52eaa
date added to LUP
2018-05-09 10:28:38
date last changed
2018-08-05 23:43:54
@article{685b0f9c-09e1-4fba-8ffa-241997e52eaa,
  abstract     = {By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.},
  author       = {Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Krishnaraja, Abinaya and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {Vertical Nanowires,III-V,TFET,Small-signal model,Intrinsic Capacitance,RF,Cgd,Cgs},
  language     = {eng},
  month        = {05},
  number       = {7},
  pages        = {943--946},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Capacitance Measurements in Vertical III-V Nanowire TFETs},
  url          = {http://dx.doi.org/10.1109/LED.2018.2833168},
  volume       = {39},
  year         = {2018},
}