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Improved quality of InSb-on-insulator microstructures by flash annealing into melt

Menon, Heera LU ; Södergren, Lasse LU ; Athle, Robin LU ; Johansson, Jonas LU orcid ; Steer, Matthew ; Thayne, Iain and Borg, Mattias LU orcid (2021) In Nanotechnology 32(16).
Abstract

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result... (More)

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm2 V−1 s−1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.

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Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Flash lamp anneal, Hall mobility, Heterointegration, Insb, Rapid melt growth
in
Nanotechnology
volume
32
issue
16
article number
165602
publisher
IOP Publishing
external identifiers
  • pmid:33361572
  • scopus:85101309354
ISSN
0957-4484
DOI
10.1088/1361-6528/abd656
project
Integration of III-V semiconductor on Si by Rapid Melt Growth
Melting into Applied inteGrated MAterials
language
English
LU publication?
yes
id
92988c9c-cfbe-4e38-9ee4-5a82292e6780
date added to LUP
2021-03-04 10:00:14
date last changed
2024-04-18 02:52:52
@article{92988c9c-cfbe-4e38-9ee4-5a82292e6780,
  abstract     = {{<p>Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.</p>}},
  author       = {{Menon, Heera and Södergren, Lasse and Athle, Robin and Johansson, Jonas and Steer, Matthew and Thayne, Iain and Borg, Mattias}},
  issn         = {{0957-4484}},
  keywords     = {{Flash lamp anneal; Hall mobility; Heterointegration; Insb; Rapid melt growth}},
  language     = {{eng}},
  month        = {{04}},
  number       = {{16}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Improved quality of InSb-on-insulator microstructures by flash annealing into melt}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/abd656}},
  doi          = {{10.1088/1361-6528/abd656}},
  volume       = {{32}},
  year         = {{2021}},
}