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Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

Kilpi, Olli Pekka LU ; Wu, Jun LU ; Svensson, Johannes LU ; Lind, Erik LU orcid and Wernersson, Lars Erik LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
Abstract

We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.

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author
; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2017 Symposium on VLSI Technology, VLSI Technology 2017
article number
7998191
pages
36 - 37
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
37th Symposium on VLSI Technology, VLSI Technology 2017
conference location
Kyoto, Japan
conference dates
2017-06-05 - 2017-06-08
external identifiers
  • scopus:85028059009
ISBN
9784863486058
DOI
10.23919/VLSIT.2017.7998191
language
English
LU publication?
yes
id
5de8234f-ebd9-4b69-9bdb-fde6d3099809
date added to LUP
2017-09-07 14:02:29
date last changed
2024-05-12 20:42:15
@inproceedings{5de8234f-ebd9-4b69-9bdb-fde6d3099809,
  abstract     = {{<p>We present vertical InAs nanowire MOSFETs on Si with an In<sub>0.7</sub>Ga<sub>0.3</sub>As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and I<sub>off</sub> below 1 nA/μm at V<sub>d</sub> 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has I<sub>on</sub>=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and I<sub>on</sub>=88 μA/μm at I<sub>off</sub> 1 nA/μm and V<sub>d</sub> 0.5 V.</p>}},
  author       = {{Kilpi, Olli Pekka and Wu, Jun and Svensson, Johannes and Lind, Erik and Wernersson, Lars Erik}},
  booktitle    = {{2017 Symposium on VLSI Technology, VLSI Technology 2017}},
  isbn         = {{9784863486058}},
  language     = {{eng}},
  month        = {{07}},
  pages        = {{36--37}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I<sub>on</sub> = 330 μa/μm at I<sub>off</sub> = 100 nA/μm and V<sub>D</sub> = 0.5 v}},
  url          = {{https://lup.lub.lu.se/search/files/67113424/VLSI17.pdf}},
  doi          = {{10.23919/VLSIT.2017.7998191}},
  year         = {{2017}},
}