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Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

Kilpi, Olli Pekka LU ; Wu, Jun LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars Erik LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 In 2017 Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
Abstract

We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2017 Symposium on VLSI Technology, VLSI Technology 2017
pages
36 - 37
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
37th Symposium on VLSI Technology, VLSI Technology 2017
external identifiers
  • scopus:85028059009
ISBN
9784863486058
DOI
10.23919/VLSIT.2017.7998191
language
English
LU publication?
yes
id
5de8234f-ebd9-4b69-9bdb-fde6d3099809
date added to LUP
2017-09-07 14:02:29
date last changed
2018-01-07 12:18:34
@inproceedings{5de8234f-ebd9-4b69-9bdb-fde6d3099809,
  abstract     = {<p>We present vertical InAs nanowire MOSFETs on Si with an In<sub>0.7</sub>Ga<sub>0.3</sub>As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and I<sub>off</sub> below 1 nA/μm at V<sub>d</sub> 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has I<sub>on</sub>=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and I<sub>on</sub>=88 μA/μm at I<sub>off</sub> 1 nA/μm and V<sub>d</sub> 0.5 V.</p>},
  author       = {Kilpi, Olli Pekka and Wu, Jun and Svensson, Johannes and Lind, Erik and Wernersson, Lars Erik},
  booktitle    = {2017 Symposium on VLSI Technology, VLSI Technology 2017},
  isbn         = {9784863486058},
  language     = {eng},
  month        = {07},
  pages        = {36--37},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I<sub>on</sub> = 330 μa/μm at I<sub>off</sub> = 100 nA/μm and V<sub>D</sub> = 0.5 v},
  url          = {http://dx.doi.org/10.23919/VLSIT.2017.7998191},
  year         = {2017},
}