High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μ A/ μ m
Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU
and Wernersson, Lars-erik
LU
(2023)
In IEEE Access
11.
p.95692-95696
- Abstract
- We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2 μA/μm , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at VDS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm , the ON-current for the same device is 18.6 μA/μm at VDS = 300 mV for IOFF of 1 nA/ μm.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/98b38433-6b4b-4cf9-b0a5-04e1d524f84a
- author
- Rangasamy, Gautham
LU
; Zhu, Zhongyunshen
LU
and Wernersson, Lars-erik
LU
- organization
- publishing date
- 2023-08-30
- type
- Contribution to journal
- publication status
- published
- subject
- in
- IEEE Access
- volume
- 11
- pages
- 95692 - 95696
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85169686676
- ISSN
- 2169-3536
- DOI
- 10.1109/ACCESS.2023.3310253
- language
- English
- LU publication?
- yes
- id
- 98b38433-6b4b-4cf9-b0a5-04e1d524f84a
- date added to LUP
- 2023-09-16 15:46:00
- date last changed
- 2023-11-10 14:39:00
@article{98b38433-6b4b-4cf9-b0a5-04e1d524f84a,
abstract = {{We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2 μA/μm , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at VDS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm , the ON-current for the same device is 18.6 μA/μm at VDS = 300 mV for IOFF of 1 nA/ μm.}},
author = {{Rangasamy, Gautham and Zhu, Zhongyunshen and Wernersson, Lars-erik}},
issn = {{2169-3536}},
language = {{eng}},
month = {{08}},
pages = {{95692--95696}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Access}},
title = {{High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m}},
url = {{http://dx.doi.org/10.1109/ACCESS.2023.3310253}},
doi = {{10.1109/ACCESS.2023.3310253}},
volume = {{11}},
year = {{2023}},
}