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High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μ A/ μ m

Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU orcid and Wernersson, Lars-erik LU (2023) In IEEE Access 11. p.95692-95696
Abstract
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2 μA/μm , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at VDS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm , the ON-current for the same device is 18.6 μA/μm at VDS = 300 mV for IOFF of 1 nA/ μm.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Access
volume
11
pages
95692 - 95696
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85169686676
ISSN
2169-3536
DOI
10.1109/ACCESS.2023.3310253
language
English
LU publication?
yes
id
98b38433-6b4b-4cf9-b0a5-04e1d524f84a
date added to LUP
2023-09-16 15:46:00
date last changed
2025-10-14 12:27:26
@article{98b38433-6b4b-4cf9-b0a5-04e1d524f84a,
  abstract     = {{We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2 μA/μm , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at VDS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm , the ON-current for the same device is 18.6 μA/μm at VDS = 300 mV for IOFF of 1 nA/ μm.}},
  author       = {{Rangasamy, Gautham and Zhu, Zhongyunshen and Wernersson, Lars-erik}},
  issn         = {{2169-3536}},
  language     = {{eng}},
  month        = {{08}},
  pages        = {{95692--95696}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Access}},
  title        = {{High Current Density Vertical Nanowire TFETs With I₆₀ > 1
              μ
              A/
              μ
              m}},
  url          = {{http://dx.doi.org/10.1109/ACCESS.2023.3310253}},
  doi          = {{10.1109/ACCESS.2023.3310253}},
  volume       = {{11}},
  year         = {{2023}},
}