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A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System

Au, Ngoc Duc LU ; Nguyen, Danh Manh ; Nhut, Tan Doan and Seo, Chulhun (2022) In IEEE Transactions on Microwave Theory and Techniques 70(10). p.4502-4510
Abstract

To improve the power handling capability at ground stations of a 5.8-GHz solar space power satellite using microwave power transmission, a power charge-pump meta-semiconductor field-effect transistor (MESFET)-based rectifier is presented in this article. Unlike conventional microwave Schottky diodes, diode-connected MESFETs, whose nonlinear characteristics help them to have a unique current–voltage (I-V) curve that overcomes the limitations of a Schottky diode. Thus, the maximum input power of the proposed rectifier is extended up to 251.2 mW by replacing a Schottky diode with a diode-connected MESFET. Additionally, a class F harmonic processing network is introduced to control the voltage and current waveform at the load of... (More)

To improve the power handling capability at ground stations of a 5.8-GHz solar space power satellite using microwave power transmission, a power charge-pump meta-semiconductor field-effect transistor (MESFET)-based rectifier is presented in this article. Unlike conventional microwave Schottky diodes, diode-connected MESFETs, whose nonlinear characteristics help them to have a unique current–voltage (I-V) curve that overcomes the limitations of a Schottky diode. Thus, the maximum input power of the proposed rectifier is extended up to 251.2 mW by replacing a Schottky diode with a diode-connected MESFET. Additionally, a class F harmonic processing network is introduced to control the voltage and current waveform at the load of the rectifier. Consequently, the RF-dc conversion efficiency is increased since the power dissipation is limited at the junction resistance of both the drain and the source of the MESFET. Owing to the abnormal characteristics of the diode-connected MESFET, the measured conversion efficiency of our rectifier is approximately 73.2% at 126 mW, and the input power range for rectifier efficiency higher than 50% is between 16 and 224 mW. The proposed rectifier for the space solar power satellite application is demonstrated and verified using a microwave wireless power transmission system.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
58-GHz rectifier, Capacitance, Circular polarization, harmonic processing, Logic gates, MESFETs, Microwave integrated circuits, microwave power transmission (MPT), Microwave theory and techniques, Schottky diodes, solar space power satellite, Voltage
in
IEEE Transactions on Microwave Theory and Techniques
volume
70
issue
10
pages
9 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85136005726
ISSN
0018-9480
DOI
10.1109/TMTT.2022.3194199
language
English
LU publication?
yes
id
751c6821-4a22-4423-8bd9-550e1f8becf8
date added to LUP
2022-09-19 13:29:05
date last changed
2024-02-18 07:24:47
@article{751c6821-4a22-4423-8bd9-550e1f8becf8,
  abstract     = {{<p>To improve the power handling capability at ground stations of a 5.8-GHz solar space power satellite using microwave power transmission, a power charge-pump meta-semiconductor field-effect transistor (MESFET)-based rectifier is presented in this article. Unlike conventional microwave Schottky diodes, diode-connected MESFETs, whose nonlinear characteristics help them to have a unique current&amp;#x2013;voltage (I-V) curve that overcomes the limitations of a Schottky diode. Thus, the maximum input power of the proposed rectifier is extended up to 251.2 mW by replacing a Schottky diode with a diode-connected MESFET. Additionally, a class F harmonic processing network is introduced to control the voltage and current waveform at the load of the rectifier. Consequently, the RF-dc conversion efficiency is increased since the power dissipation is limited at the junction resistance of both the drain and the source of the MESFET. Owing to the abnormal characteristics of the diode-connected MESFET, the measured conversion efficiency of our rectifier is approximately 73.2% at 126 mW, and the input power range for rectifier efficiency higher than 50% is between 16 and 224 mW. The proposed rectifier for the space solar power satellite application is demonstrated and verified using a microwave wireless power transmission system.</p>}},
  author       = {{Au, Ngoc Duc and Nguyen, Danh Manh and Nhut, Tan Doan and Seo, Chulhun}},
  issn         = {{0018-9480}},
  keywords     = {{58-GHz rectifier; Capacitance; Circular polarization; harmonic processing; Logic gates; MESFETs; Microwave integrated circuits; microwave power transmission (MPT); Microwave theory and techniques; Schottky diodes; solar space power satellite; Voltage}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{4502--4510}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Microwave Theory and Techniques}},
  title        = {{A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System}},
  url          = {{http://dx.doi.org/10.1109/TMTT.2022.3194199}},
  doi          = {{10.1109/TMTT.2022.3194199}},
  volume       = {{70}},
  year         = {{2022}},
}