Gate-controlled near-surface Josephson junctions
(2024) In Applied Physics Letters 124(4).- Abstract
Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak... (More)
Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak value of ∼ 3.5%, was extracted, mainly limited by contact transparency.
(Less)
- author
- Olausson, L. LU ; Olausson, P. LU and Lind, E. LU
- organization
- publishing date
- 2024-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 124
- issue
- 4
- article number
- 042601
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85183078874
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0182485
- language
- English
- LU publication?
- yes
- id
- de01d071-9cbc-4600-8451-ecafc74c868b
- date added to LUP
- 2024-02-26 13:22:46
- date last changed
- 2024-02-27 08:41:43
@article{de01d071-9cbc-4600-8451-ecafc74c868b, abstract = {{<p>Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak value of ∼ 3.5%, was extracted, mainly limited by contact transparency.</p>}}, author = {{Olausson, L. and Olausson, P. and Lind, E.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{4}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Gate-controlled near-surface Josephson junctions}}, url = {{http://dx.doi.org/10.1063/5.0182485}}, doi = {{10.1063/5.0182485}}, volume = {{124}}, year = {{2024}}, }