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Gate-controlled near-surface Josephson junctions

Olausson, L. LU ; Olausson, P. LU and Lind, E. LU (2024) In Applied Physics Letters 124(4).
Abstract

Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak... (More)

Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak value of ∼ 3.5%, was extracted, mainly limited by contact transparency.

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Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
124
issue
4
article number
042601
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85183078874
ISSN
0003-6951
DOI
10.1063/5.0182485
language
English
LU publication?
yes
id
de01d071-9cbc-4600-8451-ecafc74c868b
date added to LUP
2024-02-26 13:22:46
date last changed
2024-02-27 08:41:43
@article{de01d071-9cbc-4600-8451-ecafc74c868b,
  abstract     = {{<p>Gate-tunable Josephson junctions are interesting for quantum technology applications, such as gatemon qubits and topological Majorana-based qubits. Furthermore, high-frequency compatible geometries can be utilized for implementing electrically pumped parametric amplifiers. In this paper, we combine processing, measurements, and modeling of near-surface InGaAs Josephson field-effect transistors in order to facilitate circuit simulations of actual non-ideal devices. We developed a compact model using Verilog-A and confirmed the validity of our model by accurately reproducing our measured data by circuit simulations in Advanced Design System. From the circuit simulations, an effective gate-dependent transmission coefficient, with a peak value of ∼ 3.5%, was extracted, mainly limited by contact transparency.</p>}},
  author       = {{Olausson, L. and Olausson, P. and Lind, E.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Gate-controlled near-surface Josephson junctions}},
  url          = {{http://dx.doi.org/10.1063/5.0182485}},
  doi          = {{10.1063/5.0182485}},
  volume       = {{124}},
  year         = {{2024}},
}