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III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

Lindelöw, Fredrik LU ; Sri Garigapati, Navya LU ; Södergren, Lasse LU ; Borg, Mattias LU and Lind, Erik LU (2020) In Semiconductor Science and Technology 35(6).
Abstract

We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-state and output conductance while increasing breakdown voltage. Microwave compatible devices with L g = 32 nm showing f T = 75 GHz and f max = 100 GHz are realized with the process, demonstrating matched performance to spacer-less devices but with relaxed scaling requirements.

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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InGaAs, InP, metal-oxide-semiconductor field-effect transistor, nanowire, radio-frequency, spacers
in
Semiconductor Science and Technology
volume
35
issue
6
article number
065015
publisher
IOP Publishing
external identifiers
  • scopus:85086020148
ISSN
0268-1242
DOI
10.1088/1361-6641/ab8398
language
English
LU publication?
yes
id
9fbbcd87-eaed-4ca7-910c-36d527bc22f9
date added to LUP
2020-06-22 08:59:00
date last changed
2020-07-09 09:01:48
@article{9fbbcd87-eaed-4ca7-910c-36d527bc22f9,
  abstract     = {<p>We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-state and output conductance while increasing breakdown voltage. Microwave compatible devices with L <sub>g</sub> = 32 nm showing f <sub>T</sub> = 75 GHz and f <sub>max</sub> = 100 GHz are realized with the process, demonstrating matched performance to spacer-less devices but with relaxed scaling requirements.</p>},
  author       = {Lindelöw, Fredrik and Sri Garigapati, Navya and Södergren, Lasse and Borg, Mattias and Lind, Erik},
  issn         = {0268-1242},
  language     = {eng},
  month        = {06},
  number       = {6},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications},
  url          = {http://dx.doi.org/10.1088/1361-6641/ab8398},
  doi          = {10.1088/1361-6641/ab8398},
  volume       = {35},
  year         = {2020},
}