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III-V Heterostructure Nanowire Tunnel FETs

Lind, Erik LU orcid ; Memisevic, Elvedin LU ; Dey, Anil LU and Wernersson, Lars-Erik LU (2015) In IEEE Journal of the Electron Devices Society 3(3). p.96-102
Abstract
In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Journal of the Electron Devices Society
volume
3
issue
3
pages
96 - 102
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84928637709
ISSN
2168-6734
DOI
10.1109/JEDS.2015.2388811
language
English
LU publication?
yes
id
7934976e-1144-4e23-a960-1b7caa7d3023
date added to LUP
2018-07-06 16:58:10
date last changed
2024-07-08 16:22:42
@article{7934976e-1144-4e23-a960-1b7caa7d3023,
  abstract     = {{In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.}},
  author       = {{Lind, Erik and Memisevic, Elvedin and Dey, Anil and Wernersson, Lars-Erik}},
  issn         = {{2168-6734}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{96--102}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Journal of the Electron Devices Society}},
  title        = {{III-V Heterostructure Nanowire Tunnel FETs}},
  url          = {{https://lup.lub.lu.se/search/files/47495901/Lind_InAs_GaSb_TFET.pdf}},
  doi          = {{10.1109/JEDS.2015.2388811}},
  volume       = {{3}},
  year         = {{2015}},
}