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III-V Heterostructure Nanowire Tunnel FETs

Lind, Erik LU ; Memisevic, Elvedin LU ; Dey, Anil LU and Wernersson, Lars-Erik LU (2015) In IEEE Journal of the Electron Devices Society 3(3). p.96-102
Abstract
In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Journal of the Electron Devices Society
volume
3
issue
3
pages
96 - 102
publisher
Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84928637709
ISSN
2168-6734
DOI
10.1109/JEDS.2015.2388811
language
English
LU publication?
yes
id
7934976e-1144-4e23-a960-1b7caa7d3023
date added to LUP
2018-07-06 16:58:10
date last changed
2018-07-15 04:50:17
@article{7934976e-1144-4e23-a960-1b7caa7d3023,
  abstract     = {In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.},
  author       = {Lind, Erik and Memisevic, Elvedin and Dey, Anil and Wernersson, Lars-Erik},
  issn         = {2168-6734},
  language     = {eng},
  number       = {3},
  pages        = {96--102},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Journal of the Electron Devices Society},
  title        = {III-V Heterostructure Nanowire Tunnel FETs},
  url          = {http://dx.doi.org/10.1109/JEDS.2015.2388811},
  volume       = {3},
  year         = {2015},
}