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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Persson, Anton E.O. LU orcid ; Athle, Robin LU ; Littow, Pontus ; Persson, Karl Magnus LU ; Svensson, Johannes LU ; Borg, Mattias LU orcid and Wernersson, Lars Erik LU (2020) In Applied Physics Letters 116(6).
Abstract

Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution... (More)

Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
116
issue
6
article number
062902
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85079573021
ISSN
0003-6951
DOI
10.1063/1.5141403
project
Ultra-fast thermal processing for next-generation ferroelectric hafnia
Development and Implementation of Ferroelectric oxides
language
English
LU publication?
yes
id
c3bf612a-365b-49aa-a06d-4d96f07466b8
date added to LUP
2020-03-01 07:11:05
date last changed
2025-10-14 13:11:30
@article{c3bf612a-365b-49aa-a06d-4d96f07466b8,
  abstract     = {{<p>Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.</p>}},
  author       = {{Persson, Anton E.O. and Athle, Robin and Littow, Pontus and Persson, Karl Magnus and Svensson, Johannes and Borg, Mattias and Wernersson, Lars Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{6}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization}},
  url          = {{http://dx.doi.org/10.1063/1.5141403}},
  doi          = {{10.1063/1.5141403}},
  volume       = {{116}},
  year         = {{2020}},
}