Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(2020) In Applied Physics Letters 116(6).- Abstract
Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution... (More)
Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
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- author
- Persson, Anton E.O. LU ; Athle, Robin LU ; Littow, Pontus ; Persson, Karl Magnus LU ; Svensson, Johannes LU ; Borg, Mattias LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2020-02-10
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 116
- issue
- 6
- article number
- 062902
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85079573021
- ISSN
- 0003-6951
- DOI
- 10.1063/1.5141403
- project
- Ultra-fast thermal processing for next-generation ferroelectric hafnia
- Development and Implementation of Ferroelectric oxides
- language
- English
- LU publication?
- yes
- id
- c3bf612a-365b-49aa-a06d-4d96f07466b8
- date added to LUP
- 2020-03-01 07:11:05
- date last changed
- 2024-01-31 17:05:37
@article{c3bf612a-365b-49aa-a06d-4d96f07466b8, abstract = {{<p>Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.</p>}}, author = {{Persson, Anton E.O. and Athle, Robin and Littow, Pontus and Persson, Karl Magnus and Svensson, Johannes and Borg, Mattias and Wernersson, Lars Erik}}, issn = {{0003-6951}}, language = {{eng}}, month = {{02}}, number = {{6}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization}}, url = {{http://dx.doi.org/10.1063/1.5141403}}, doi = {{10.1063/1.5141403}}, volume = {{116}}, year = {{2020}}, }