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2023
Mark Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
Athle, Robin ^LU and Borg, Mattias ^LU (2023) In Advanced Intelligent Systems
- Contribution to journal › Article
Mark Impact of Temperature-Induced Oxide Defects on Hf_xZr_1−xO₂ Ferroelectric Tunnel Junction Memristor Performance
Athle, Robin ^LU and Borg, Mattias ^LU (2023) In IEEE Transactions on Electron Devices 70(3). p.1412-1416
- Contribution to journal › Article
2022
Mark Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing
Athle, Robin ^LU ; Blom, Theodor ; Irish, Austin ^LU ; Persson, Anton E.O. ^LU ; Wernersson, Lars Erik ^LU ; Timm, Rainer ^LU and Borg, Mattias ^LU (2022) In Advanced Materials Interfaces 9(27).
- Contribution to journal › Article
Mark Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf_{1- x}Zr_xO₂
Athle, Robin ^LU ; Persson, Anton E.O. ^LU ; Troian, Andrea ^LU and Borg, Mattias ^LU (2022) In ACS Applied Electronic Materials 4(3). p.1002-1009
- Contribution to journal › Article
2021
Mark Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1-xZr_xO₂
Athle, Robin ^LU ; Persson, Anton E.O. ^LU ; Irish, Austin ^LU ; Menon, Heera ^LU ; Timm, Rainer ^LU and Borg, Mattias ^LU (2021) In ACS applied materials & interfaces 13(9). p.11089-11095
- Contribution to journal › Article
2020
Mark Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
Persson, Anton E.O. ^LU ; Athle, Robin ^LU ; Littow, Pontus ; Persson, Karl Magnus ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU and Wernersson, Lars Erik ^LU (2020) In Applied Physics Letters 116(6).
- Contribution to journal › Article
Mark A method for estimating defects in ferroelectric thin film MOSCAPs
Persson, Anton E. O. ^LU ; Atle, Robin ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU and Wernersson, Lars-Erik ^LU (2020) In Applied Physics Letters 117(24).
- Contribution to journal › Article

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