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A method for estimating defects in ferroelectric thin film MOSCAPs

Persson, Anton E. O. LU orcid ; Atle, Robin LU ; Svensson, Johannes LU ; Borg, Mattias LU orcid and Wernersson, Lars-Erik LU (2020) In Applied Physics Letters 117(24).
Abstract
We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on
semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important
device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement
scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future
optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for
the narrow bandgap semiconductor InAs and show that low... (More)
We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on
semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important
device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement
scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future
optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for
the narrow bandgap semiconductor InAs and show that low temperature characterization is critical to reduce the influence of the minority
carrier response; however, the methods should be transferrable to room temperature for semiconductors with a wider bandgap. Our results
clearly indicate that the defect density of the HfxZr1xO2 (HZO) films increases at the crystallization temperature, but the increase is modest
and remains independent of the annealing temperature at even more elevated temperatures. It is also shown that the shrinkage of the
memory window caused by field cycling is not accompanied by an increase in defect density. (Less)
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
117
issue
24
publisher
American Institute of Physics (AIP)
ISSN
0003-6951
DOI
10.1063/5.0029210
project
Development and Implementation of Ferroelectric oxides
Ultra-fast thermal processing for next-generation ferroelectric hafnia
language
English
LU publication?
yes
id
2b47e9f0-42cf-41f5-a764-26bbc5c1a946
date added to LUP
2021-12-03 09:52:40
date last changed
2023-02-28 12:11:17
@article{2b47e9f0-42cf-41f5-a764-26bbc5c1a946,
  abstract     = {{We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on<br/>semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important<br/>device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement<br/>scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future<br/>optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for<br/>the narrow bandgap semiconductor InAs and show that low temperature characterization is critical to reduce the influence of the minority<br/>carrier response; however, the methods should be transferrable to room temperature for semiconductors with a wider bandgap. Our results<br/>clearly indicate that the defect density of the HfxZr1xO2 (HZO) films increases at the crystallization temperature, but the increase is modest<br/>and remains independent of the annealing temperature at even more elevated temperatures. It is also shown that the shrinkage of the<br/>memory window caused by field cycling is not accompanied by an increase in defect density.}},
  author       = {{Persson, Anton E. O. and Atle, Robin and Svensson, Johannes and Borg, Mattias and Wernersson, Lars-Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{12}},
  number       = {{24}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{A method for estimating defects in ferroelectric thin film MOSCAPs}},
  url          = {{http://dx.doi.org/10.1063/5.0029210}},
  doi          = {{10.1063/5.0029210}},
  volume       = {{117}},
  year         = {{2020}},
}