A method for estimating defects in ferroelectric thin film MOSCAPs
(2020) In Applied Physics Letters 117(24).- Abstract
- We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on
semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important
device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement
scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future
optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for
the narrow bandgap semiconductor InAs and show that low... (More) - We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on
semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important
device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement
scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future
optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for
the narrow bandgap semiconductor InAs and show that low temperature characterization is critical to reduce the influence of the minority
carrier response; however, the methods should be transferrable to room temperature for semiconductors with a wider bandgap. Our results
clearly indicate that the defect density of the HfxZr1xO2 (HZO) films increases at the crystallization temperature, but the increase is modest
and remains independent of the annealing temperature at even more elevated temperatures. It is also shown that the shrinkage of the
memory window caused by field cycling is not accompanied by an increase in defect density. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2b47e9f0-42cf-41f5-a764-26bbc5c1a946
- author
- Persson, Anton E. O.
LU
; Atle, Robin LU ; Svensson, Johannes LU ; Borg, Mattias LU
and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2020-12-14
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 117
- issue
- 24
- publisher
- American Institute of Physics (AIP)
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0029210
- project
- Development and Implementation of Ferroelectric oxides
- Ultra-fast thermal processing for next-generation ferroelectric hafnia
- language
- English
- LU publication?
- yes
- id
- 2b47e9f0-42cf-41f5-a764-26bbc5c1a946
- date added to LUP
- 2021-12-03 09:52:40
- date last changed
- 2023-02-28 12:11:17
@article{2b47e9f0-42cf-41f5-a764-26bbc5c1a946, abstract = {{We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated on<br/>semiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas important<br/>device parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurement<br/>scheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the future<br/>optimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data for<br/>the narrow bandgap semiconductor InAs and show that low temperature characterization is critical to reduce the influence of the minority<br/>carrier response; however, the methods should be transferrable to room temperature for semiconductors with a wider bandgap. Our results<br/>clearly indicate that the defect density of the HfxZr1xO2 (HZO) films increases at the crystallization temperature, but the increase is modest<br/>and remains independent of the annealing temperature at even more elevated temperatures. It is also shown that the shrinkage of the<br/>memory window caused by field cycling is not accompanied by an increase in defect density.}}, author = {{Persson, Anton E. O. and Atle, Robin and Svensson, Johannes and Borg, Mattias and Wernersson, Lars-Erik}}, issn = {{0003-6951}}, language = {{eng}}, month = {{12}}, number = {{24}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{A method for estimating defects in ferroelectric thin film MOSCAPs}}, url = {{http://dx.doi.org/10.1063/5.0029210}}, doi = {{10.1063/5.0029210}}, volume = {{117}}, year = {{2020}}, }