Vertical nanowire III–V MOSFETs with improved high-frequency gain
(2020) In Electronics Letters 56(13). p.669-671- Abstract
- High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2d56992c-c97c-4920-b821-de2585cdc22f
- author
- Kilpi, Olli-Pekka LU ; Hellenbrand, Markus LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2020-04
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Electronics Letters
- volume
- 56
- issue
- 13
- pages
- 669 - 671
- publisher
- IEE
- external identifiers
-
- scopus:85087328561
- ISSN
- 1350-911X
- DOI
- 10.1049/el.2020.0266
- language
- English
- LU publication?
- yes
- id
- 2d56992c-c97c-4920-b821-de2585cdc22f
- date added to LUP
- 2020-05-12 23:47:32
- date last changed
- 2023-11-20 04:47:07
@article{2d56992c-c97c-4920-b821-de2585cdc22f, abstract = {{High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.}}, author = {{Kilpi, Olli-Pekka and Hellenbrand, Markus and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{1350-911X}}, language = {{eng}}, number = {{13}}, pages = {{669--671}}, publisher = {{IEE}}, series = {{Electronics Letters}}, title = {{Vertical nanowire III–V MOSFETs with improved high-frequency gain}}, url = {{https://lup.lub.lu.se/search/files/79602999/EL_RF_final.pdf}}, doi = {{10.1049/el.2020.0266}}, volume = {{56}}, year = {{2020}}, }