Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Vertical nanowire III–V MOSFETs with improved high-frequency gain

Kilpi, Olli-Pekka LU ; Hellenbrand, Markus LU ; Svensson, Johannes LU ; Lind, Erik LU orcid and Wernersson, Lars-Erik LU (2020) In Electronics Letters 56(13). p.669-671
Abstract
High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
56
issue
13
pages
669 - 671
publisher
IEE
external identifiers
  • scopus:85087328561
ISSN
1350-911X
DOI
10.1049/el.2020.0266
language
English
LU publication?
yes
id
2d56992c-c97c-4920-b821-de2585cdc22f
date added to LUP
2020-05-12 23:47:32
date last changed
2025-10-14 09:50:07
@article{2d56992c-c97c-4920-b821-de2585cdc22f,
  abstract     = {{High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.}},
  author       = {{Kilpi, Olli-Pekka and Hellenbrand, Markus and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{1350-911X}},
  language     = {{eng}},
  number       = {{13}},
  pages        = {{669--671}},
  publisher    = {{IEE}},
  series       = {{Electronics Letters}},
  title        = {{Vertical nanowire III–V MOSFETs with improved high-frequency gain}},
  url          = {{https://lup.lub.lu.se/search/files/79602999/EL_RF_final.pdf}},
  doi          = {{10.1049/el.2020.0266}},
  volume       = {{56}},
  year         = {{2020}},
}