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Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation

Andric, Stefan LU ; Ohlsson-Fhager, Lars LU orcid and Wernersson, Lars Erik LU (2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88
Abstract

Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating... (More)

Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating the potential of this technology in implementation of mm-wave communication and sensing systems.

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Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
capacitance, feedback, low-noise amplifiers, millimeterwave integrated circuits, MOSFET, Nanowires
host publication
EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
series title
EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
article number
9337299
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
15th European Microwave Integrated Circuits Conference, EuMIC 2020
conference location
Utrecht, Netherlands
conference dates
2021-01-11 - 2021-01-12
external identifiers
  • scopus:85100916642
ISBN
9782874870606
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
id
4f497b62-f900-4a18-ab9b-7fa8976a5d19
alternative location
https://ieeexplore.ieee.org/document/9337299
date added to LUP
2021-03-02 14:46:51
date last changed
2022-04-27 00:32:49
@inproceedings{4f497b62-f900-4a18-ab9b-7fa8976a5d19,
  abstract     = {{<p>Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating the potential of this technology in implementation of mm-wave communication and sensing systems.</p>}},
  author       = {{Andric, Stefan and Ohlsson-Fhager, Lars and Wernersson, Lars Erik}},
  booktitle    = {{EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference}},
  isbn         = {{9782874870606}},
  keywords     = {{capacitance; feedback; low-noise amplifiers; millimeterwave integrated circuits; MOSFET; Nanowires}},
  language     = {{eng}},
  pages        = {{85--88}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference}},
  title        = {{Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation}},
  url          = {{https://ieeexplore.ieee.org/document/9337299}},
  year         = {{2021}},
}