Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
(2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88- Abstract
Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating... (More)
Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating the potential of this technology in implementation of mm-wave communication and sensing systems.
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- author
- Andric, Stefan LU ; Ohlsson-Fhager, Lars LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2021
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- capacitance, feedback, low-noise amplifiers, millimeterwave integrated circuits, MOSFET, Nanowires
- host publication
- EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
- series title
- EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
- article number
- 9337299
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 15th European Microwave Integrated Circuits Conference, EuMIC 2020
- conference location
- Utrecht, Netherlands
- conference dates
- 2021-01-11 - 2021-01-12
- external identifiers
-
- scopus:85100916642
- ISBN
- 9782874870606
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
- id
- 4f497b62-f900-4a18-ab9b-7fa8976a5d19
- alternative location
- https://ieeexplore.ieee.org/document/9337299
- date added to LUP
- 2021-03-02 14:46:51
- date last changed
- 2022-04-27 00:32:49
@inproceedings{4f497b62-f900-4a18-ab9b-7fa8976a5d19, abstract = {{<p>Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, allowing for their independent engineering to improve device high frequency performance. Minimizing gate-drain parasitic capacitance with the use of a vertical sidewall spacer enables universal feedback neutralization and a unilateral circuit design. For vertical spacer thickness above 20 nm, the gate-drain capacitance variability is reduced. Device technology is verified by simulation of 60 GHz three-stage low-noise amplifier. The amplifier exhibits 10 dB gain and 6.9 dB noise figure. The noise figure can be further reduced to 5.9 dB by combining several feedback techniques. The use of capacitance minimization reduces circuit sensitivity to device variation, demonstrating the potential of this technology in implementation of mm-wave communication and sensing systems.</p>}}, author = {{Andric, Stefan and Ohlsson-Fhager, Lars and Wernersson, Lars Erik}}, booktitle = {{EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference}}, isbn = {{9782874870606}}, keywords = {{capacitance; feedback; low-noise amplifiers; millimeterwave integrated circuits; MOSFET; Nanowires}}, language = {{eng}}, pages = {{85--88}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference}}, title = {{Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation}}, url = {{https://ieeexplore.ieee.org/document/9337299}}, year = {{2021}}, }