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- 2023
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
- 2021
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Mark
Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001).
(
- Contribution to journal › Article
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Mark
Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability
(
- Contribution to journal › Article
- 2020
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Mark
Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)
(
- Contribution to journal › Article
- 2019
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Mark
Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)
2019) In Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials 75(1). p.59-70(
- Contribution to journal › Article