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Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability

Gribisch, Philipp LU orcid and Fissel, Andreas (2021) In Semiconductor Science and Technology 36(11). p.115016-115016
Abstract
The thermal stability of monoclinic Gd2O3 grown on Si(001) as well as changes of the interfacial layer formed during the growth are investigated during rapid thermal annealing in nitrogen atmosphere between 600 °C and 1000 °C using x-ray diffraction and transmission electron microscopy (TEM). The monoclinic Gd2O3 layer was grown at 400 °C and oxygen partial pressure of 5 × 10−7 mbar. The Gd2O3 layers exhibit first an initial strain release during annealing at 800 ◦C and subsequent induced thermal strain after annealing at 1000 °C. Thereby, the monoclinic structure remained unchanged. The interfacial layer formation during the growth is discussed in the framework... (More)
The thermal stability of monoclinic Gd2O3 grown on Si(001) as well as changes of the interfacial layer formed during the growth are investigated during rapid thermal annealing in nitrogen atmosphere between 600 °C and 1000 °C using x-ray diffraction and transmission electron microscopy (TEM). The monoclinic Gd2O3 layer was grown at 400 °C and oxygen partial pressure of 5 × 10−7 mbar. The Gd2O3 layers exhibit first an initial strain release during annealing at 800 ◦C and subsequent induced thermal strain after annealing at 1000 °C. Thereby, the monoclinic structure remained unchanged. The interfacial layer formation during the growth is discussed in the framework of different physical effects, such as the presence of a nucleation barrier or the presence of a partially oxidized surface. The interfacial layer thickness increases with increasing annealing temperature, which can be attributed to the presence of oxygen and the high diffusivity during the annealing. The TEM investigations show a change in the layer contrast, which indicates a change in the interfacial layer composition. This could be due to the accumulation of oxygen and a subsequent release at higher temperatures.
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author
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publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductor Science and Technology
volume
36
issue
11
pages
115016 - 115016
publisher
IOP Publishing
external identifiers
  • scopus:85118846458
ISSN
0268-1242
DOI
10.1088/1361-6641/ac2962
language
English
LU publication?
no
id
c19b50c5-c624-4228-9b4c-55a54a01800b
date added to LUP
2022-12-09 15:07:52
date last changed
2023-04-13 04:02:03
@article{c19b50c5-c624-4228-9b4c-55a54a01800b,
  abstract     = {{The thermal stability of monoclinic Gd<sub>2</sub>O<sub>3</sub> grown on Si(001) as well as changes of the interfacial layer formed during the growth are investigated during rapid thermal annealing in nitrogen atmosphere between 600 °C and 1000 °C using x-ray diffraction and transmission electron microscopy (TEM). The monoclinic Gd<sub>2</sub>O<sub>3</sub> layer was grown at 400 °C and oxygen partial pressure of 5 × 10<sup>−7</sup> mbar. The Gd<sub>2</sub>O<sub>3</sub> layers exhibit first an initial strain release during annealing at 800 ◦C and subsequent induced thermal strain after annealing at 1000 °C. Thereby, the monoclinic structure remained unchanged. The interfacial layer formation during the growth is discussed in the framework of different physical effects, such as the presence of a nucleation barrier or the presence of a partially oxidized surface. The interfacial layer thickness increases with increasing annealing temperature, which can be attributed to the presence of oxygen and the high diffusivity during the annealing. The TEM investigations show a change in the layer contrast, which indicates a change in the interfacial layer composition. This could be due to the accumulation of oxygen and a subsequent release at higher temperatures.<br/>}},
  author       = {{Gribisch, Philipp and Fissel, Andreas}},
  issn         = {{0268-1242}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{11}},
  pages        = {{115016--115016}},
  publisher    = {{IOP Publishing}},
  series       = {{Semiconductor Science and Technology}},
  title        = {{Interfacial layer formation during the growth of Gd<sub>2</sub>O<sub>3</sub>  on Si(001) and its thermal stability}},
  url          = {{http://dx.doi.org/10.1088/1361-6641/ac2962}},
  doi          = {{10.1088/1361-6641/ac2962}},
  volume       = {{36}},
  year         = {{2021}},
}