Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)
Gribisch, P. LU
and Fissel, A.
(2020)
In Journal of Applied Physics
128(5).
p.055108-055108
- Abstract
- The structural and dielectric properties of gadolinium oxide (Gd2O3) grown on Si(001) depending on the epitaxial growth conditions were investigated. Gd2O3 layers were grown at temperatures between 250 °C and 400 °C with an oxygen partial pressure between 2 x 10-7 mbar and 5 x10-7 mbar. The crystal structure of the Gd2O3 turns out to be monoclinic with rotational domains as revealed by x-ray diffraction measurements and transmission electron microscopy (TEM) investigations. The dielectric properties can be tuned with growth temperature, forming gas annealing, and an increase in oxygen partial pressure. Furthermore, the dielectric constant was found to... (More)
- The structural and dielectric properties of gadolinium oxide (Gd2O3) grown on Si(001) depending on the epitaxial growth conditions were investigated. Gd2O3 layers were grown at temperatures between 250 °C and 400 °C with an oxygen partial pressure between 2 x 10-7 mbar and 5 x10-7 mbar. The crystal structure of the Gd2O3 turns out to be monoclinic with rotational domains as revealed by x-ray diffraction measurements and transmission electron microscopy (TEM) investigations. The dielectric properties can be tuned with growth temperature, forming gas annealing, and an increase in oxygen partial pressure. Furthermore, the dielectric constant was found to increase with the layer thickness. This can be interpreted in terms of the presence of a two layer stack consisting an interfacial quasi-amorphous and monoclinic Gd2O3 on top, as confirmed by TEM. The value of around 33 was extracted for the dielectric constant of monoclinic Gd2O3, which is much higher than for cubic
Gd2O3. The best Gd2O3 layers grown at 400 °C and ρO2 = 5 x10-7 mbar exhibit also a characteristic leakage current value J(Vfb 1V) for a CET value of around 2 nm in the range of a few nA/cm2, which enable the applicability in electronic devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/9b3840d7-9839-425b-b085-834346684f50
- author
- Gribisch, P.
LU
and Fissel, A.
- publishing date
- 2020-08-05
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 128
- issue
- 5
- pages
- 055108 - 055108
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85094651675
- ISSN
- 0021-8979
- DOI
- 10.1063/5.0007793
- language
- English
- LU publication?
- no
- id
- 9b3840d7-9839-425b-b085-834346684f50
- date added to LUP
- 2022-12-09 15:14:28
- date last changed
- 2022-12-12 10:08:27
@article{9b3840d7-9839-425b-b085-834346684f50,
abstract = {{The structural and dielectric properties of gadolinium oxide (Gd<sub>2</sub>O<sub>3</sub>) grown on Si(001) depending on the epitaxial growth conditions were investigated. Gd<sub>2</sub>O<sub>3</sub> layers were grown at temperatures between 250 °C and 400 °C with an oxygen partial pressure between 2 x 10<sup>-7</sup> mbar and 5 x10<sup>-7</sup> mbar. The crystal structure of the Gd<sub>2</sub>O<sub>3</sub> turns out to be monoclinic with rotational domains as revealed by x-ray diffraction measurements and transmission electron microscopy (TEM) investigations. The dielectric properties can be tuned with growth temperature, forming gas annealing, and an increase in oxygen partial pressure. Furthermore, the dielectric constant was found to increase with the layer thickness. This can be interpreted in terms of the presence of a two layer stack consisting an interfacial quasi-amorphous and monoclinic Gd<sub>2</sub>O<sub>3</sub> on top, as confirmed by TEM. The value of around 33 was extracted for the dielectric constant of monoclinic Gd<sub>2</sub>O<sub>3</sub>, which is much higher than for cubic<br/>Gd<sub>2</sub>O<sub>3</sub>. The best Gd<sub>2</sub>O<sub>3</sub> layers grown at 400 °C and ρO<sub>2</sub> = 5 x10<sup>-7</sup> mbar exhibit also a characteristic leakage current value J(V<sub>fb</sub> 1V) for a CET value of around 2 nm in the range of a few nA/cm<sup>2</sup>, which enable the applicability in electronic devices.}},
author = {{Gribisch, P. and Fissel, A.}},
issn = {{0021-8979}},
language = {{eng}},
month = {{08}},
number = {{5}},
pages = {{055108--055108}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Applied Physics}},
title = {{Tuning of structural and dielectric properties of Gd<sub>2</sub>O<sub>3</sub> grown on Si(001)}},
url = {{http://dx.doi.org/10.1063/5.0007793}},
doi = {{10.1063/5.0007793}},
volume = {{128}},
year = {{2020}},
}