Erik Lind
- Department of Electrical and Information Technology
- Nano Electronics
- NanoLund: Centre for Nanoscience
- LTH Profile Area: AI and Digitalization
- LTH Profile Area: Nanoscience and Semiconductor Technology
- LU Profile Area: Light and Materials
- Electromagnetics and Nanoelectronics
- LTH Profile Area: The Energy Transition
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- 2024
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Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
2024) In Physica Status Solidi. A: Applications and Materials Science(
- Contribution to journal › Article
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Gate-controlled near-surface Josephson junctions
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- Contribution to journal › Article
- 2023
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Low temperature atomic hydrogen annealing of InGaAs MOSFETs
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- Contribution to journal › Article
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Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
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- Contribution to journal › Article
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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
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- Contribution to journal › Article
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8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
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- Contribution to journal › Article
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Cryogenic Characteristics of InGaAs MOSFET
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- Contribution to journal › Article
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Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
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- Contribution to journal › Article
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Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
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- Contribution to journal › Article
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
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- Contribution to journal › Article